TITLE

CoSi[sub 2] surface phase separation into self-assembled lateral multilayers

AUTHOR(S)
Goldfarb, I.
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1185
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
CoSi[SUB2] was grown on the Si(001) surface by solid-phase reaction. Its transformation from elemental Co/Si(001) was complete after a 700°C anneal, as followed from the reflection high-energy electron diffraction analysis. Scanning tunneling microscopy observations of the resulting surface revealed a variety of atomic reconstructions, some apparent only under bias-dependent imaging conditions. Particularly striking was the appearance of alternating (3√2x2√2)-R45° and (4√2x2√2)-R45° surface domains arranged in long parallel stripes. Plausible reasons for such a phase separation are discussed.
ACCESSION #
9140765

 

Related Articles

  • Heteroepitaxial growth of InAs on Si: a new type of quantum dot. Cyrlin, G. E.; Petrov, V. N.; Dubrovskii, V. G.; Samsonenko, Yu. B.; Polyakov, N. K.; Golubok, A. O.; Masalov, S. A.; Komyak, N. I.; Ustinov, V. M.; Egorov, A. Yu.; Kovsh, A. R.; Maximov, M. V.; Tsatsul�nikov, A. F.; Volovik, B. V.; Zhukov, A. E.; Kop�ev, P. S.; Ledentsov, N. N.; Alferov, Zh. I.; Bimberg, D. // Semiconductors;Sep99, Vol. 33 Issue 9, p972 

    The mechanism for heteroepitaxial growth in the InAs/Si system is studied by reflection highenergy electron diffraction, scanning tunnelling microscopy, and photoluminescence. For certain growth conditions, InAs nanostructures are found to develop on the Si surface immediately during the growth...

  • A (2 square root of 3 x 2 square root of 13) surface phase in the 6H--SiC (0001) surface studied... Naitoh, M.; Takami, J.; Nishigaki, S.; Toyama, N. // Applied Physics Letters;8/2/1999, Vol. 75 Issue 5, p650 

    Investigates the structure of silicon-rich 6H-SiC(0001) surface by scanning tunneling microscopy and low-energy electron diffraction. Observation of a surface phase with periodicity coexisting with the known stable phase; Proposal of a structural model containing eight Si adatoms per unit cell...

  • Binding and ordering of C[sub 60] on Pd(110): Investigations at the local and mesoscopic scale. Weckesser, J.; Cepek, C.; Fasel, R.; Barth, J. V.; Baumberger, F.; Greber, T.; Kern, K. // Journal of Chemical Physics;11/15/2001, Vol. 115 Issue 19, p9001 

    We present a comprehensive study on the binding and ordering of C[sub 60] on a Pd(110) surface employing scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS) and x-ray photoelectron diffraction (XPD). Three well-ordered structures...

  • First step towards the growth of single-crystal oxides on Si: Formation of a two-dimensional crystalline silicate on Si(001). Liang, Y.; Gan, S.; Engelhard, M. // Applied Physics Letters;11/26/2001, Vol. 79 Issue 22, p3591 

    We have investigated the structural and chemical properties of reconstructed Sr/Si(001) surfaces at different Sr coverages using low energy electron diffraction, x-ray photoelectron spectroscopy, and scanning tunneling microscopy. The results show that upon low temperature oxidation and...

  • Morphology, bond saturation and reconstruction of hexagonal SiC surfaces. Starke, U.; Schardt, J.; Franke, M. // Applied Physics A: Materials Science & Processing;1997, Vol. 65 Issue 6, p587 

    The atomic structure of silicon carbide (SiC) surfaces in hexagonal orientation is investigated with the main emphasis put on surface morphology and dangling-bond saturation either by adspecies or by surface reconstruction. By using quantitative low-energy electron diffraction (LEED) intensity...

  • Influence of Arsenic on the Atomic Structure of the Si(112) Surface. Zavitz, Daniel H.; Evstigneeva, Alexandra; Singh, Rasdip; Fulk, Chad; Trenary, Michael // Journal of Electronic Materials;Jun2005, Vol. 34 Issue 6, p839 

    The surface science techniques of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and scanning tunneling microscopy (STM) have been used to characterize the clean Si(112) surface and the influence of an As monolayer on the properties and structure of the surface....

  • New monolayer phases of n-alkane thiols self-assembled on Au(111): Preparation, surface characterization, and imaging. Camillone, N.; Eisenberger, P.; Leung, T. Y. B.; Schwartz, P.; Scoles, G.; Poirier, G. E.; Tarlov, M. J. // Journal of Chemical Physics;12/15/1994, Vol. 101 Issue 12, p11031 

    We report the observation by scanning tunneling microscopy (STM) and low energy atom diffraction, of new, striped, structures at the surface of monolayers of n-alkane thiols [CH3 (CH2)n-1 SH with n=8,10,12] self-assembled on the (111) face of single crystal gold. These structures can be prepared...

  • 2Xn surface structure of SiGe layers deposited on Si(100). Butz, R.; Kampers, S. // Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1307 

    Examines the surface structure of silicon germanide (SiGe) layers deposited on Si (100). Transformation of the 2X1 surface into the 2Xn structure in low energy electron diffraction; Evidence of dimer loss by scanning tunneling microscopy; Dependence of missing dimer density on the Ge content...

  • Phase transformation in self-assembled Gd silicide nanostructures on Si(001). Gangfeng Ye; Crimp, Martin A.; Nogami, Jun // Journal of Materials Research;9/14/2011, Vol. 26 Issue 17, p2276 

    Gd silicide nanostructures epitaxially grown on Si(001) are studied by plan-view transmission electron microscopy and associated nanobeam electron diffraction, as well as scanning tunneling microscopy. The nanobeam diffraction measurements show a direct correlation between the nanostructure...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics