Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography

Offermans, P.; Koenraad, P. M.; Wolter, J. H.; Song, J. D.; Kim, Jong Min; Bae, Seong Ju; Lee, Yong Tak
February 2003
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1191
Academic Journal
We have investigated the[SUB-]structural properties of as-grown and annealed (750 and 800°C) digital alloy InGaAlAs (λ=1.3 μm) laser structures by cross-sectional scanning-tunneling microscopy. We show that it is possible to resolve the digital alloy period in the as-grown sample and the 750°C annealed sample. The 800°C annealed sample did not show the digital alloy period because of intermixing of the digital alloy. The 750°C annealed sample showed only slight intermixing. The barrier/well interface roughness for the as-grown and the 750°C annealed samples was the same. Annealing at 800°C showed large barrier/well interface roughness and lateral composition modulation due to the phase separation of InGaAs/InAlAs alloys.


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