Formation of LaAlO[sub 3] films on Si(100) substrates using molecular beam deposition

Park, Byung-Eun; Ishiwara, Hiroshi
February 2003
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1197
Academic Journal
Lanthanum aluminate (LaAlO[SUB3]) films were deposited on Si(100) substrates by a molecular beam deposition method with an electron beam gun and annealed typically in N[SUB2] atmosphere at 800deg;C for 1 min. Reflection high-energy electron diffraction observation as well as x-ray diffraction analysis showed that the crystalline quality of the LaAlO[SUB3] films was amorphous, even after annealing at 800°C. It was also found from x-ray fluorescence measurements that the ratio of La-to-Al for LaAlO[SUB3] films was almost 1:1. The dielectric constant of LaAlO[SUB3] (films was estimated to be 20-25) and the leakage current density was improved by about eight orders of magnitude in maximum after the annealing process.


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