Electroreflectance of hexagonal gallium nitride at the fundamental and E[sub 1] spectral regions

Al-Kuhaili, M. F.; Glosser, R.; Wickenden, A. E.; Koleske, D. D.; Henry, R. L.
February 2003
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1203
Academic Journal
We have measured the room-temperature electro-reflectance (ER) of hexagonal gallium nitride. Our measurements were obtained at the fundamental optical gap and at the E[SUB1] (critical point regions. The measurements were performed using front contact ER. In the fundamental region, the ER spectra were found to be of excitonic nature and in the low field regime. In the E[SUB1] region, the ER spectra were also in the low field regime, but were fitted with two-dimensional critical points.


Related Articles

  • Reduction of threading dislocation density in GaN using an intermediate temperature interlayer. Bourret-Courchesne, E. D.; Bourret-Courchesne, E.D.; Kellermann, S.; Yu, K. M.; Yu, K.M.; Benamara, M.; Liliental-Weber, Z.; Washburn, J.; Irvine, S. J. C.; Irvine, S.J.C.; Stafford, A. // Applied Physics Letters;11/27/2000, Vol. 77 Issue 22 

    GaN thin films with a reduced threading dislocation density have been produced by organometallic vapor phase epitaxy using an intermediate temperature interlayer. A description of the growth process is presented with characterization results. Reduction of the dislocation density was obtained by...

  • Diamond micro-Raman thermometers for accurate gate temperature measurements. Simon, Roland B.; Pomeroy, James W.; Kuball, Martin // Applied Physics Letters;5/26/2014, Vol. 104 Issue 21, p1 

    Determining the peak channel temperature in AlGaN/GaN high electron mobility transistors and other devices with high accuracy is an important and challenging issue. A surface-sensitive thermometric technique is demonstrated, utilizing Raman thermography and diamond microparticles to measure the...

  • Some thermodynamic aspects of nitrides in materials science. Zięborak-Tomaszkiewicz, Iwona // Journal of Thermal Analysis & Calorimetry;Mar2006, Vol. 83 Issue 3, p611 

    The energies of combustion in fluorine of gallium nitride and indium nitride in wurzite crystalline structure have been measured in a two-compartment calorimetric bomb, and new standard molar enthalpies of formation have been calculated: Δf H m0(GaN(cr) 298.15 K)= –(163.7±4.2) kJ...

  • Temperature-mediated phase selection during growth of GaN on (111)A and (111)B GaAs substrates. Yang, J.W.; Kuznia, J.N. // Applied Physics Letters;12/18/1995, Vol. 67 Issue 25, p3759 

    Demonstrates the feasibility of temperature-mediated phase selection during growth of gallium nitride (GaN) on (111) A and (111) B gallium arsenide substrates. Correlation between growth temperature and GaN(zinc blende)-to-GaN(wurtzite) transition; Use of cross-sectional electron microscopy;...

  • Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method. Xi, Y.; Schubert, E. F. // Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2163 

    A theoretical model for the dependence of the diode thrward voltage (VÆ’) on junction temperature (Tj) is developed. An expression tbr dVÆ’/dT is derived that takes into account all relevant contributions to the temperature dependence of the forward voltage including the intrinsic carrier...

  • Micro-Raman thermometry in the presence of complex stresses in GaN devices. Beechem, T.; Christensen, A.; Graham, S.; Green, D. // Journal of Applied Physics;Jun2008, Vol. 103 Issue 12, p124501 

    Raman thermometry is often utilized to measure temperature in gallium nitride (GaN) electronics. However, the accuracy of the technique is subject to errors arising from stresses which develop during device operation as a result of both thermoelastic and inverse piezoelectric effects. To assess...

  • Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles. Ren, Huihui; Jian, Jikang; Chen, Chu; Pan, Dong; Ablat, Abdulezi; Sun, Yanfei; Li, Jin; Wu, Rong // Applied Physics A: Materials Science & Processing;Jul2014, Vol. 116 Issue 1, p185 

    Room-temperature ferromagnetism has been found in Ga-deficient GaN grown using the direct reaction of Ga $$_{2}$$ O $$_{3}$$ powder with NH $$_{3}$$ gas. The observed magnetism in GaN induced by Ga vacancies is investigated both experimentally and theoretically. First-principles calculations...

  • In Situ Temperature Measurement of GaN-Based Ultraviolet Light-Emitting Diodes by Micro-Raman Spectroscopy. Wang, Yaqi; Xu, Hui; Alur, Siddharth; Sharma, Yogesh; Cheng, An-Jen; Kang, Kilho; Josefsberg, Ryan; Park, Minseo; Sakhawat, Sharukh; Guha, Arindra; Akpa, Okechukwu; Akavaram, Saritha; Das, Kalyankumar // Journal of Electronic Materials;Nov2010, Vol. 39 Issue 11, p2448 

    The junction temperatures of ultraviolet (UV) light-emitting diodes (LEDs) were determined in situ using noncontact micro-Raman spectroscopy. This method is based on the systematic downshift of the Raman peak as junction temperature rises. A calibration measurement was carried out first to...

  • Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures. Tiras, E.; Ardali, S.; Arslan, E.; Ozbay, E. // Journal of Electronic Materials;Sep2012, Vol. 41 Issue 9, p2350 

    The two-dimensional (2D) electron energy relaxation in Al0.83In0.17N/AlN/GaN heterostructures has been investigated experimentally. Shubnikov-de Haas (SdH) effect measurements were employed in the investigations. The electron temperature (Te) of hot electrons was obtained from the lattice...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics