Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga[sub 1-x]Mn[sub x]As epitaxial layers

Yuldashev, Sh. U.; Im, Hyunsik; Yalishev, V. Sh.; Park, C. S.; Kang, T. W.; Lee, Sanghoon; Sasaki, Y.; Liu, X.; Furdyna, J. K.
February 2003
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1206
Academic Journal
We have investigated the effect of additional doping by Be on the properties of Ga[SUB1-x]Mn[SUBx]As(x=50.03). For this relatively low value of x, the Curie temperature is observed to increase with increasing Be concentration. We show that the temperature dependence of the resistivity at zero magnetic field, including the resistivity maximum near the Curie temperature, can be successfully described by the magnetoimpurity scattering model proposed by Nagaev [Phys. Rep. 346, 387 (2001)] in both the paramagnetic and the ferromagnetic temperature regions. Quantitative analysis of the data in terms of this model yields the value of the p-d exchange energy &bar;N[SUB0β&bar;≈1.6eV for Ga[SUB0.97]Mn[0.03]As.


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