Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

Kanjilal, A.; Hansen, J. Lundsgaard; Gaiduk, P.; Larsen, A. Nylandsted; Cherkashin, N.; Claverie, A.; Normand, P.; Kapelanakis, E.; Skarlatos, D.; Tsoukalas, D.
February 2003
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1212
Academic Journal
A sheet of spherical, well-separated, crystalline Ge nanodots embedded in SiO[SUB2] on top of a p-(001)Si wafer was fabricated by molecular beam epitaxy (MBE) combined with rapid thermal processing and characterized structurally and electrically. The average size of the Ge nanodots was estimated to be 4.5 nm with an average aerial density of 3X10[SUP11]cm[SUP-2], situated at 4.4 nm in average away from the Si/SiO[SUB2] (interface. Significant charge storage effects were observed through capacitance-voltage measurements of metal-oxide-semiconductor capacitors.


Related Articles

  • Role of Surface Segregation in Formation of Abrupt Interfaces in Si/Si[sub 1 � ][sub x]Ge[sub x] Heterocompositions Grown by Molecular-Beam Epitaxy with Combined Sources. Orlov, L. K.; Ivina, N. L. // Semiconductors;Feb2002, Vol. 36 Issue 2, p191 

    The coefficients of segregation of germanium atoms were measured for the Si[sub 1-x]Ge[sub x] system grown by molecular-beam epitaxy with combined Si-GeH[sub 4] sources under the conditions of efficient filling of surface bonds by the products of the decomposition of hydrides. In their turn,...

  • Low-temperature growth of Ge on Si(100). Eaglesham, D.J.; Cerullo, M. // Applied Physics Letters;5/20/1991, Vol. 58 Issue 20, p2276 

    Studies heteroepitaxial molecular beam epitaxial growth of germanium on silicon at low temperatures. Low-temperature limit to growth; Suppression of island formation; Planar growth at all temperatures; Occurrence of strain relaxation of the planar epilayers.

  • Ge(001) gas-source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening. Bramblett, T. R.; Lu, Q.; Lee, N.-E.; Taylor, N.; Hasan, M.-A.; Greene, J. E. // Journal of Applied Physics;2/15/1995, Vol. 77 Issue 4, p1504 

    Reports on the first growth kinetics and microstructural investigations of germanium (Ge) gas-source molecular beam epitaxy from digermane. Introduction to Ge; Experimental procedure; Results and discussion.

  • Strain relaxation of faceted Ge islands on Si(113). Jian-hong Zhu; Miesner, C. // Applied Physics Letters;10/18/1999, Vol. 75 Issue 16, p2395 

    Studies the strain relaxation of faceted germanium islands on silicon(113) grown by molecular beam epitaxy. Atomic force microscopy (AFM) image of germanium islands; Raman spectra right on a surface germanium island and on the germanium wetting layer; Photoluminescence spectra of the germanium...

  • Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular.... Xun Wang; Zui-min Jiang // Applied Physics Letters;12/15/1997, Vol. 71 Issue 24, p3543 

    Investigates the growth of uniform germanium (Ge) dots on silicon(100) using molecular beam epitaxy. Evidence of a peak downward shift of Ge-Ge mode; Impact of phonon confinement on Ge-Ge mode in the Ge dots; Attribution of a photoluminescence peak development to free exciton longitudinal...

  • Low-defect-density germanium on silicon obtained by a novel growth phenomenon. Malta, D.P.; Posthill, J.B. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p844 

    Examines the growth of heteroepitaxial germanium on silicon using molecular beam epitaxy. Indication on the localized germanium melting and subsequent silicon local alloying; Creation of dense and confined threading dislocation network; Manifestation of etch pit density measurement.

  • Ge profile from the growth of SiGe buried layers by molecular beam epitaxy. Godbey, D.J.; Ancona, M.G. // Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2217 

    Examines the germanium (Ge) concentration profile of thin Si/SiGe heterostructures using elemental source molecular epitaxy. Interpretation of X-ray photoelectron spectroscopy measurements through kinetic simulation; Factors causing Ge depletion at the leading interface; Effects of Ge rich...

  • Investigation of strain-symmetrized and pseudomorphic SimGen superlattices by x-ray reciprocal space mapping. Koppensteiner, E.; Bauer, G.; Kibbel, H.; Kasper, E. // Journal of Applied Physics;9/15/1994, Vol. 76 Issue 6, p3489 

    Demonstrates the usefulness of x-ray reciprocal space mapping for the nondestructive, precise analysis of both the strain status, and the composition of the active layers and the virtual substrates, by comparing silicon/germanium structures grown by molecular-beam epitaxy on different buffers. ...

  • Transient growth rate change during gas source molecular beam epitaxy of Si[sub 1--x]Ge[sub x].... Ohtani, N.; Mokler, S.M.; Xie, M.H.; Zhang, J.; Joyce, B.A. // Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2042 

    Examines Si[sub 1-x]Ge[sub x] alloys transient growth rate change during gas source molecular beam epitaxy. Effect of disilane and germane on the oscillation; Observation on the growth rate during the oscillation period; Discussion on the origin of transient growth rate.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics