TITLE

Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

AUTHOR(S)
Kanjilal, A.; Hansen, J. Lundsgaard; Gaiduk, P.; Larsen, A. Nylandsted; Cherkashin, N.; Claverie, A.; Normand, P.; Kapelanakis, E.; Skarlatos, D.; Tsoukalas, D.
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1212
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A sheet of spherical, well-separated, crystalline Ge nanodots embedded in SiO[SUB2] on top of a p-(001)Si wafer was fabricated by molecular beam epitaxy (MBE) combined with rapid thermal processing and characterized structurally and electrically. The average size of the Ge nanodots was estimated to be 4.5 nm with an average aerial density of 3X10[SUP11]cm[SUP-2], situated at 4.4 nm in average away from the Si/SiO[SUB2] (interface. Significant charge storage effects were observed through capacitance-voltage measurements of metal-oxide-semiconductor capacitors.
ACCESSION #
9140756

 

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