Large conductance switching and memory effects in organic molecules for data-storage applications

Bandyopadhyay, Anirban; Pal, Amlan J.
February 2003
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1215
Academic Journal
We have observed a large electrical conductance switching (ON:OFF ratio=10[SUP5]) in single-layer sandwich structures based on organic molecules at room temperature. The switching devices showed an associated memory effect for data-storage applications. We could write or erase a state and read it for many cycles. In switching devices, the active semiconductor retained its high conducting state until a reverse voltage erased it. A high conducting state arose due to restoration of conjugation in the molecule via electroreduction. Such a high ON-OFF ratio in a single layer sandwich structure, as compared to contemporary switching devices, is due to low off-state leakage current. The concept of conjugation restoration has been verified in supramolecular structures by adding donor groups to the molecule, which resulted in increased off-state current and hence lower ON-OFF ratio. Our work set a generalized example of selecting organic molecules to obtain higher ON-OFF ratio in molecular switching devices.


Related Articles

  • Conductivity and absorption edge of amorphous silicyne. Mashin, A. I.; Khokhlov, A. F. // Semiconductors;Nov99, Vol. 33 Issue 11, p1251 

    Experimental results on the temperature dependence of the conductivity and the spectrum of the absorption coefficient of amorphous silicyne � the linear allotropic form of silicon � are reported. Silicyne is found to be a semiconductor with a ~1.6-eV band gap. Near room temperature...

  • Effect of low-temperature charge redistributions on the conductivity of surface electron channels at the Si / SiO[sub 2] interface. Bochkareva, N. I.; Khorev, S. A. // Semiconductors;Nov99, Vol. 33 Issue 11, p1212 

    The behavior of the electron density at the Si/SiO[sub 2] interface with temperature is investigated by measuring the rf conductivity of band-edge surface electronic channels that shunt Schottky barriers in n-type Si. The results are explained within a model in which the "metallic" character of...

  • Electrical Properties of Semiconductors with Pair Defects. Karazhanov, S. Zh.; Kanaki, �. V. // Semiconductors;Aug2000, Vol. 34 Issue 8, p880 

    Electrical properties of semiconductors with pair defects were investigated. It was demonstrated that the electron lifetime, resistivity, and Hall factor exhibit a pronounced nonmonotonic dependence on the pair defect concentration. A mechanism relating this phenomenon to a precise compensation...

  • Properties of Precisely Compensated Semiconductors. Karazhanov, S. Zh. // Semiconductors;Aug2000, Vol. 34 Issue 8, p872 

    Properties of precisely compensated semiconductors were studied; a phenomenon consisting of a drastic increase in resistivity by several orders of magnitude as the concentration of deep-level impurities increased was observed. It is shown that an anomalous increase in the lifetime of charge...

  • Two-dimensional conductivity in the layered semiconductor InSe at low temperatures owing to weak localization. El-Khatouri, D.; Khater, A.; Balkanski, M.; Julien, C.; Guesdon, J. P. // Journal of Applied Physics;9/1/1989, Vol. 66 Issue 5, p2049 

    Examines two-dimensional conductivity in the layered semiconductor InSe at low temperatures owing to weak localization. Analysis of the electrical conductivity of the layered semiconductor; Application of techniques in testing InSe samples; Details of conductivity measurements of nonannealed...

  • Meyer-Neldel rule in the space-charge-limited conduction of hydrogenated amorphous silicon. Oversluizen, G.; Nieuwesteeg, K.J.B.M.; Boogaard, J. // Applied Physics Letters;7/15/1991, Vol. 59 Issue 3, p312 

    Examines the conductivity of a hydrogenated amorphous silicon n-in structure. Characterization of Meyer-Neldel rule; Calculation on the density of states dependence of gamma; Ohmic conductivity of i-type hydrogenated amorphous silicon.

  • JESSI in jeopardy?  // New Scientist;11/2/91, Vol. 132 Issue 1793, p16 

    Reports on the reduction of the 1992 budget for JESSI, the European initiative on semiconductor research by 30 percent.

  • The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. II. Kunst, M.; Beck, G. // Journal of Applied Physics;2/15/1988, Vol. 63 Issue 4, p1093 

    Part II. Discusses a study which examined the charge carrier kinetic in semiconductors. Conductivity of semiconductors; Principles underlying time-resolved microwave conductivity; Results and discussion.

  • Reply to ‘‘Comment on ‘Temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiC’ ’’. Smith, S. R.; Evwaraye, A. O.; Mitchel, W. C. // Journal of Applied Physics;12/1/1996, Vol. 80 Issue 11, p6572 

    Presents a reply to a comment on the temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiC. Illustration of temperature data from 250 to 330 kelvin; Factors that influence temperature dependence in p-type and n-type conductivity materials.

  • Dielectric properties of the semiconducting compounds Cd[sub 1-x]Fe[sub x]Te. Żukowski, P. V.; Partyka, J.; Wegierek, P.; Sidorenko, J. W.; Szostak, J. A.; Rodzik, A. // Semiconductors;Mar1999, Vol. 33 Issue 3, p276 

    The dielectric permittivity and conductivity of Cd[sub 1 - x]Fe[sub x]Te compounds (0


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics