Magnetotransport measurements through stacked InAs self-assembled quantum dots

Son, M. H.; Oh, J. H.; Jeong, D. Y.; Ahn, D.; Jun, M. S.; Hwang, S. W.; Oh, J. E.; Engel, L. W.
February 2003
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1230
Academic Journal
We report on low temperature magnetotunneling measurements through an AlAs/GaAs n-i-n diode incorporating stacked double layers of InAs self-assembled quantum dots (SAQDs). We observe that two strong conductance peaks at zero magnetic field (B) are split into four peaks at high B values. The double conductance peaks are interpreted as due to the conduction through the symmetric and antisymmetric states of coupled SAQDs. The separations between conductance peaks at B50 and at B518 T are consistent with the calculated energy separation between the symmetric and the antisymmetric states and with the previously reported Zeeman splitting, respectively.


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