Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy

Choi, Kyoung Jin; Jang, Ho Wan; Lee, Jong-Lam
February 2003
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1233
Academic Journal
The effects of inductively coupled plasma (ICP) etching on electrical properties of n-type GaN Schottky contacts were investigated by observing ion damage using deep-level transient spectroscopy. An electron trap, not previously seen, localized near the contact, as well as a pre-existing trap, was observed in the ICP-etched sample. The ICP-etched surface was found to be N-deficient, which means that N vacancies (V[SUBN]) were produced by ICP etching. From these, the) origin of the ICP-induced electron trap was suggested to be V[SUBN] or a V[SUBN]-related complex of point)defects. The ICP-induced traps provided a path for the transport of electrons, leading to the reduction of Schottky barrier height and increase of gate leakage current.


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