Nitrogen-induced decrease of the electron effective mass in GaAs[sub 1-x]N[sub x] thin films measured by thermomagnetic transport phenomena

Young, D. L.; Geisz, J. F.; Coutts, T. J.
February 2003
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1236
Academic Journal
Thin films of GaAs[SUB1-x]N[SUBx] were grown on insulating GaAs substrates and subjected to temperature-dependent resistivity, Hall, Seebeck, and Nernst coefficient measurements. Density of states, effective-mass values, which are calculated from the transport data, decrease from 0.084 m[SUBe] to 0.029m[SUBe] as x increases from 0 to 0.004.


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