TITLE

Controlling crystallization of Pb(Zr,Ti)O[sub 3] thin films on IrO[sub 2] electrodes at low temperature through interface engineering

AUTHOR(S)
Maki, K.; Liu, B. T.; Vu, H.; Nagarajan, V.; Ramesh, R.; Fujimori, Y.; Nakamura, T.; Takasu, H.
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1263
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Pb(Zr,Ti)O[SUB3] (PZT) capacitors were fabricated on IrO[SUB2]-Si substrates with and without SrRuO[SUB3] (SRO) template layers using a modified sol-gel process. The crystallization temperature of PZT films was lowered significantly by interposing a thin SRO layer between the PZT and IrO[SUB2], which modifies the nucleation and growth of perovskite PZT by acting as a structural and chemical template. At 450°C, the films deposited directly on IrO[SUB2] were not perovskite phase and therefore not ferroelectric; at 550°C, they exhibited a mixed perovskite-pyrochlore microstructure. In contrast, the introduction of a thin (10-50 nm) SRO template layer yielded complete perovskite phase at temperatures down to 450°C. Test capacitors exhibited desirable ferroelectric properties, including low saturation voltage, high resistivity, small pulse-width dependence, and good fatigue endurance, which provides a promising way to low-temperature integration of high-density ferroelectric random access memories with a stacked-type capacitor structure.
ACCESSION #
9140737

 

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