Physicochemical properties of HfO[sub 2] in response to rapid thermal anneal

Lysaght, Patrick S.; Foran, Brendan; Bersuker, Gennadi; Chen, Peijun J.; Murto, Robert W.; Huff, Howard R.
February 2003
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1266
Academic Journal
Changes in the composition of atomic layer deposited, uncapped hafnium dioxide films, as a function of anneal temperature, have been evaluated by several advanced analytical techniques including; x-ray reflectivity, high-resolution transmission electron microscopy, and medium energy ion scattering. It is shown that such measurements of the high-k/Si interface layer are inconclusive and may be misinterpreted to suggest the presence of an Hf[SUBx]Si[SUB1-x]O[SUB2] (x∼0.5) transition layer. It is also demonstrated that high-temperature anneal of uncapped films may result in the formation of voids which propagate through the dielectric layer into the silicon substrate. Trends associated with defect generation, interfacial oxide growth, and the low probability of material intermixing during anneal processing are discussed.


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