TITLE

A dinuclear aluminum 8-hydroxyquinoline complex with high electron mobility for organic light-emitting diodes

AUTHOR(S)
Ma, Dongge; Wang, Guang; Hu, Yufeng; Zhang, Yanguang; Wang, Lixiang; Jing, Xiabin; Wang, Fosong; Lee, C. S.; Lee, S. T.
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1296
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A dinuclear aluminum 8-hydroxyquinoline complex (Dalq[SUB3]) with improved electron mobility was designed for organic light-emitting diodes. The electron mobility in Dalq[SUB3] was determined via transient electroluminescence (EL) from bilayer devices with structure of indium tin oxide (ITO)/N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB)/Dalq[SUB3]/Mg:Ag. It was found that the electron mobility in (Dalq[SUB3] is between 3.7-8.4x10[SUP-6] cm[SUP2]/Vs at electric fields ranging between 1.2X10[SUP6] and 4.0X10[SUP6] (V/cm, which is a factor of two higher than that in Alq[SUB3]. The Dalq[SUB3] also shows a higher EL efficiency of 2.2 cd/A (1.2 Lm/W), as compared to Alq[SUB3] with an EL efficiency of 2.2 cd/A (1.2 Lm/W), which is attributed to more balanced electron and hole recombination due to the improved electron mobility of Dalq[SUB3].
ACCESSION #
9140726

 

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