TITLE

AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

AUTHOR(S)
Hu, X.; Deng, J.; Pala, N.; Gaska, R.; Shur, M. S.; Chen, C. Q.; Yang, J.; Simin, G.; Khan, M. A.; Rojo, J. C.; Schowalter, L. J.
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1299
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the performance of AlGaN/GaN/A1N heterostructure field-effect transistors (HFETs) grown over slightly-off c-axis, single-crystal, bulk AlN substrates. Dc and rf characteristics of these devices were comparable to HFETs grown on semi-insulating SiC. The obtained results demonstrate that bulk AlN substrates are suitable for fabricating high-power microwave AlGaN/GaN transistors.
ACCESSION #
9140725

 

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