TITLE

Diffusion-limited transport in the off-state of amorphous Si thin-film transistors

AUTHOR(S)
Lee, J. U.; Possin, G. E.
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1302
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An analytic solution is derived to model the transient off-state transport in amorphous silicon thin-film transistors. The solution is based on a diffusion equation with a generation term to account for the emission from deep states. A characteristic diffusion time is calculated that depends on the channel length. For times much greater than the diffusion time, the transport current is proportional to the generation rate from approximately uniform density of states in the band gap. For shorter times, diffusion limits the transport of channel carriers to the contacts. As a result, a substantially different off-state transient behavior is observed. The analytic solution is compared with measured results from different channel length devices.
ACCESSION #
9140724

 

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