Localized epitaxial growth of α-Al[sub 2]O[sub 3] thin films on Cr[sub 2]O[sub 3] template by sputter deposition at low substrate temperature

Jin, P.; Nakao, S.; Wang, S. X.; Wang, L. M.
February 2003
Applied Physics Letters;2/17/2003, Vol. 82 Issue 7, p1024
Academic Journal
Low-temperature growth of α-Al[sub 2]O[sub 3] films by sputtering was studied with x-ray diffraction and high-resolution transmission electron microscopy (HRTEM). Pure α-Al[sub 2]O[sub 3] film was formed at 400°C using Cr[sub 2]O[sub 3] as template, whereas amorphous or θ-Al[sub 2]O[sub 3] was formed without Cr[sub 2]O[sub 3]. HRTEM revealed localized epitaxial growth of α-Al[sub 2]O[sub 3] on Cr[sub 2]O[sub 3] with the relationship [011][sub Al[sub 2]O[sub 3]]/[011][sub Cr[sub 2]O[sub 3]], suggesting the importance of Cr[sub 2]O[sub 3] as a structural template for the growth of α-Al[sub 2]O[sub 3], in addition to other contributions such as good stoichiometry, low sputter pressure, and low deposition rate under optimized deposition conditions. Successful growth of α-Al[sub 2]O[sub 3] by sputtering at 400°C or below makes the film widely applicable to even glass substrates.


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