TITLE

Localized epitaxial growth of α-Al[sub 2]O[sub 3] thin films on Cr[sub 2]O[sub 3] template by sputter deposition at low substrate temperature

AUTHOR(S)
Jin, P.; Nakao, S.; Wang, S. X.; Wang, L. M.
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/17/2003, Vol. 82 Issue 7, p1024
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-temperature growth of α-Al[sub 2]O[sub 3] films by sputtering was studied with x-ray diffraction and high-resolution transmission electron microscopy (HRTEM). Pure α-Al[sub 2]O[sub 3] film was formed at 400°C using Cr[sub 2]O[sub 3] as template, whereas amorphous or θ-Al[sub 2]O[sub 3] was formed without Cr[sub 2]O[sub 3]. HRTEM revealed localized epitaxial growth of α-Al[sub 2]O[sub 3] on Cr[sub 2]O[sub 3] with the relationship [011][sub Al[sub 2]O[sub 3]]/[011][sub Cr[sub 2]O[sub 3]], suggesting the importance of Cr[sub 2]O[sub 3] as a structural template for the growth of α-Al[sub 2]O[sub 3], in addition to other contributions such as good stoichiometry, low sputter pressure, and low deposition rate under optimized deposition conditions. Successful growth of α-Al[sub 2]O[sub 3] by sputtering at 400°C or below makes the film widely applicable to even glass substrates.
ACCESSION #
9070305

 

Related Articles

  • Epitaxial growth study of Bi[sub 2](Sr, Ca)[sub 3]Cu[sub 2]O[sub x] films on cleaved MgO substrates. Fujita, J.; Yoshitake, T.; Satoh, T.; Igarashi, H. // Applied Physics Letters;3/11/1991, Vol. 58 Issue 10, p1092 

    Studies the in situ epitaxial growth of Bi[sub 2](Sr,Ca)[sub 3]Cu[sub 2]O[sub x] films by ion beam sputtering on cleaved MgO substrates. Crystallographic structures; Symmetry of the epitaxial films; Types of equivalently misoriented domains; Epitaxial relationship between the domains and the...

  • Presence of oxygen in the lattice of CdTe thin films. Picos-Vega, A.; Arizpe-Chávez, H.; Zelaya-Angel, O.; Ramírez-Bon, R.; Espinoza-Beltrán, F. J. // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p6073 

    Polycrystalline CdTe thin films, with oxygen concentrations (x) in the range of 0.01-15 at. %, were grown at room temperature on 7059 Corning glass by means of the rf sputtering method. For low oxygen concentrations (x≤0.3 at. %) the CdTe develops compressive stress during growth, making...

  • Epitaxial growth of CeO[sub 2] on (100) InP using reactive r.f. magnetron sputtering. Ivill, M.; Patel, M.; Kim, K.; Bae, H.; Pearton, S.J.; Norton, D.P.; Budai, J.D. // Applied Physics A: Materials Science & Processing;2002, Vol. 75 Issue 6, p699 

    The epitaxial growth of CeO[sub 2] thin films has been realized on (100) InP substrates using reactive r.f. magnetron sputtering. Oxide films were nucleated in the presence of molecular hydrogen (4% H[sub 2]/Ar sputtering gas) in order to reduce the native oxide formation on the InP surface,...

  • In situ growth and properties of single-crystalline-like La[sub 2-x]Sr[sub x]CuO[sub 4].... Kao, H.L.; Kwo, J.; Fleming, R.M.; Hong, M.; Mannaerts, J.P. // Applied Physics Letters;11/18/1991, Vol. 59 Issue 21, p2748 

    Investigates the in situ growth of single-crystalline-like La[sub 2-x]Sr[sub x]CuO[sub 4] epitaxial thin films by off-axis sputtering. Properties of the films; Use of the high-resolution scanning electron microscope; Analysis of superconductivity and transport as a function of doping.

  • Heteroepitaxial growth of ZnO films on diamond (111) plane by magnetron sputtering. Hachigo, Akihiro; Nakahata, Hideaki // Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2556 

    Describes the epitaxial growth of zinc oxide (ZnO) thin film on (111) plane of low-temperature diamond substrate by radiofrequency magnetron sputtering. Analysis of ZnO crystallinity by x-ray and reflection high-energy electron diffractions; Mismatch of lattice parameter between film and...

  • Reactive sputter deposition of alumina thin films using a hollow cathode sputtering source. Pradhan, Anshu A.; Shah, S. Ismat; Unruh, Karl M. // Review of Scientific Instruments;Nov2002, Vol. 73 Issue 11, p3841 

    Reactive sputtering allows deposition of insulating compounds that cannot be easily prepared using conventional dc sputtering methods. However, this technique suffers from problems related to the poisoning of the target and associated hysteresis effects. In addition, the operating conditions...

  • Nanostructures and chemistry of a (100)MgO/(100)GaAs interface. Bruley, J.; Stemmer, S. // Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p564 

    Examines the epitaxial growth of magnesium oxide films on gallium arsenide (GaAs) by magnetron sputtering. Observation of the growth using high-resolution transmission electron microscopy; Influence of oxygen vapor pressure on the stoichiometry of GaAs surface; Comparison between the rate of...

  • Epitaxial Fe[sub 16]N[sub 2] films grown by sputtering. Ortiz, C.; Dumpich, G. // Applied Physics Letters;11/21/1994, Vol. 65 Issue 21, p2737 

    Investigates the deposition of epitaxial Fe[sub 16]N[sub 2] thin films by reactive nitrogen sputtering. Determination of the average magnetic moment; Application of electron Mossbauer spectroscopy; Measurement of magnetic moments using the vibrating sample magnetometer.

  • Transport properties of La[sub 0.8]Ca[sub 0.2]MnO[sub 3] epitaxial films prepared by rf magnetron sputtering using soft targets. Prokhorov, V. G.; Kaminsky, G. G.; Komashko, V. A.; Park, J. S.; Lee, Y. P. // Journal of Applied Physics;7/15/2001, Vol. 90 Issue 2, p1055 

    Epitaxial La[sub 0.8]Ca[sub 0.2]MnO[sub 3] films have been prepared by the rf magnetron sputtering method using so-called ”soft” (or powder) targets instead of solid-state ones. The as-grown films have a highly oriented perovskite-like structure, a sharp metal–insulator...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics