Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN

Lu, X. H.; Yu, P. Y.; Zheng, L. X.; Xu, S. J.; Xie, M. H.; Tong, S. Y.
February 2003
Applied Physics Letters;2/17/2003, Vol. 82 Issue 7, p1033
Academic Journal
The photoluminescence spectra of a series of thin, undoped, hexagonal GaN films containing cubic GaN inclusions grown by molecular-beam epitaxy on 6H-SiC have been studied as a function of temperature and excitation power. The dependence of the line shape and peak position of a peak at ∼3.17 eV on laser power suggests that it is associated with a spatially indirect Type-II transition between hexagonal and cubic GaN. The values of the band offsets extracted from our data are in good agreement with theoretical predictions.


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