TITLE

Generation-recombination low-frequency noise signatures in GaAs metal–semiconductor field-effect transistors on laterally oxidized AlAs

AUTHOR(S)
Tzeng, S. Y.; Cich, M. J.; Zhao, R.; Feick, H.; Weber, E. R.
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/17/2003, Vol. 82 Issue 7, p1063
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-frequency noise characteristics of GaAs-on-insulator metal-semiconductor field-effect transistors, for which the insulating buffer layer was produced by lateral wet-oxidation of AlAs, are studied. Devices with different gate widths were fabricated resulting in different overoxidation times for the AlAs layer. Three characteristic generation-recombination noise signatures are observed depending on the measurement temperature and the gate bias. A generation-recombination noise signature with energy level at E[sub c] - 0.69 eV is found to increase with the amount of overoxidation time. This near midgap trap shows an increase in concentration towards the oxide interface, and it is tentatively assigned to an arsenic-antisite-related defect known from previous studies as EB4. A possible mechanism for the formation and the microscopic origin of this defect are discussed.
ACCESSION #
9070292

 

Related Articles

  • Thermal and chemical stability of Schottky metallization on GaAs. Lau, S. S.; Chen, W. X.; Marshall, E. D.; Pai, C. S.; Tseng, W. F.; Kuech, T. F. // Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1298 

    The high-temperature stability of Schottky barriers on GaAs has been correlated with the thermodynamic driving force for chemical reaction between the metallic contacts and the substrate. The chemical stability of a gate metallurgy can result in the stability of the electrical characteristics of...

  • Direct variation of metal-GaAs Schottky barrier height by the influence of interface S, Se, and Te. Waldrop, J. R. // Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1301 

    The electrical properties and interface chemistry of Schottky barrier contacts (Ag, Al, Au, Mn, Pr, and Ti) formed on n-type GaAs 〈100〉 surfaces that had prior exposure to elemental S, Se, and Te are compared to those of ideal (metal deposited onto a clean surface) contacts. The...

  • Internal emission metal-semiconductor-metal photodetectors on Si and GaAs for 1.3 microm detection. Liu, Mark Y.; Chou, Stephen Y. // Applied Physics Letters;5/15/1995, Vol. 66 Issue 20, p2673 

    Investigates the 1.3 micrometer wavelength operation of silicon and gallium arsenide metal-semiconductor-metal photodetectors. Analysis of the external quantum efficiency; Effects of increasing the Schottky barrier height; Derivation of the maximum signal-to-noise ratio.

  • Temperature dependence of noise in a GaAs metal-semiconductor field effect transistor at microwave frequencies. Fendrich, J. A.; Feng, M. // Applied Physics Letters;10/12/1998, Vol. 73 Issue 15 

    Measurements of the noise parameters of a GaAs metal-semiconductor field effect transistor (MESFET) show the minimum noise figure decreases exponentially into the noise floor with decreasing temperature for most frequencies from 2 to 18 GHz and for most currents. The MESFET noise has a thermal...

  • Roles of shallow and deep electron traps causing backgating in GaAs metal-semiconductor field-effect transistors. Khanna, Ravi; Das, Mukunda B. // Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p937 

    In GaAs metal-semiconductor field-effect transistors under backgating conditions, electrons can be trapped in ‘‘shallow’’ and deep trap levels. It is shown that the characteristics of these traps can be determined and those responsible for backgating can be identified...

  • Nonlinear high-frequency response of GaAs metal-semiconductor field-effect transistors. Abeles, J. H.; Tu, C. W.; Schwarz, S. A.; Brennan, T. M. // Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1620 

    Calculations show that phase nonlinearity in 1 μm gate length power GaAs metal-semiconductor field-effect transistors (MESFET’s) can be accounted for by the variation of gate-channel capacitance with gate bias voltage. Buried-layer GaAs MESFET’s having constant gate-channel...

  • Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates. Aksun, M. I.; Morkoç, H.; Lester, L. F.; Duh, K. H. G.; Smith, P. M.; Chao, P. C.; Longerbone, M.; Erickson, L. P. // Applied Physics Letters;12/15/1986, Vol. 49 Issue 24, p1654 

    Metal-semiconductor field-effect transistors (MESFET’s) having quarter-micron gate lengths were fabricated in GaAs films grown directly on <100> silicon tilted towards <110> by 4°. Following the growth of 2 μm undoped GaAs buffer layer a 3 μm GaAs doped with Si to a level of...

  • The Effect of Hydrogenation on the Sink Breakdown Voltage of Transistors Based on Ion-Doped Gallium Arsenide Structures. Kagadeı, V. A.; Nefyodtsev, E. V.; Proskurovsky, D. I.; Romanenko, S. V.; Shirokova, L. S. // Technical Physics Letters;Jan2003, Vol. 29 Issue 1, p12 

    It was found that the hydrogenation of ion-doped gallium arsenide structures leads to an increase in the sink breakdown voltage of high-power microwave Schottky barrier field effect transistors based on such structures (from 7 up to 17 V) and in the power of related microwave integration...

  • Electrical properties of a W-B-N Schottky contact to GaAs. Kim, Yong Tae; Woo Lee, Chang; Joon Kim, Dong // Applied Physics Letters;3/23/1998, Vol. 72 Issue 12 

    We have achieved the highest barrier height (0.90 eV) with a Schottky contact scheme of W-B-N/GaAs after rapid thermal annealing (RTA) at 700 °C, and even after the RTA at 900 °C, its barrier height (0.77 eV) is relatively higher than those of W (0.55 eV) and W-N/GaAs Schottky contacts...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics