TITLE

Lateral control of self-assembled island nucleation by focused-ion-beam micropatterning

AUTHOR(S)
Kammler, M.; Hull, R.; Reuter, M. C.; Ross, F. M.
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/17/2003, Vol. 82 Issue 7, p1093
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate that the nucleation sites of nanoscale, self-assembled Ge islands on Si(001) can be controlled by patterning the Si surface in situ with a focused ion beam. At low doses of 6000 Ga[sup +] ions per < 100 nm spot, the selective growth is achieved without modifying the initial surface topography. At larger doses, topographic effects produced by sputtering and redeposition control the selective nucleation sites. Islands grown on irradiated spots are smaller with higher aspect ratio than islands grown on clean Si(001), suggesting a strong surfactant effect of Ga.
ACCESSION #
9070282

 

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