Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

Carcia, P. F.; McLean, R. S.; Reilly, M. H.; Nunes, G.
February 2003
Applied Physics Letters;2/17/2003, Vol. 82 Issue 7, p1117
Academic Journal
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm²/V s and an on/off ratio> 10[sup 6]. These ZnO films had resistivity ∼10[sup 5] ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.


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