Charge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy

Corfdir, P.; Van Hattem, B.; Uccelli, E.; Fontcuberta i Morral, A.; Phillips, R. T.
September 2013
Applied Physics Letters;9/23/2013, Vol. 103 Issue 13, p133109
Academic Journal
We report results of a study of polytypic GaAs nanowires using low-temperature photoluminescence excitation spectroscopy. The nanowire ensemble shows a strong absorption at 1.517 eV, as a result of resonant generation of heavy-hole excitons in the zinc-blende segments of the nanowires. Excitons then diffuse along the length of the nanowire and are trapped by the type-II quantum discs arising from the zinc-blende/wurtzite crystal structure alternation and recombine radiatively. Finally, experiments on single nanowires demonstrate that the energy of the Γ7 conduction band to Γ9 valence band exciton of wurtzite GaAs is 1.521 eV at 4 K.


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