TITLE

Photoconductivity of structures based on the SnO2 porous matrix coupled with core-shell CdSe/CdS quantum dots

AUTHOR(S)
Drozdov, K. A.; Kochnev, V. I.; Dobrovolsky, A. A.; Popelo, A. V.; Rumyantseva, M. N.; Gaskov, A. M.; Ryabova, L. I.; Khokhlov, D. R.; Vasiliev, R. B.
PUB. DATE
September 2013
SOURCE
Applied Physics Letters;9/23/2013, Vol. 103 Issue 13, p133115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Embedding of quantum dots into porous oxide matrixes is a perspective technique for photosensitization of a structure. We show that the sensitization efficiency may be increased by the use of core-shell quantum dots. It is demonstrated that the photoresponse amplitude in a SnO2 porous matrix with CdSe/CdS quantum dots depends non-monotonously on the number of atomic layers in a shell. The best results are obtained for SnO2 matrixes coupled with the quantum dots with three atomic layers of a shell. Mechanisms responsible for the structure sensitization are discussed.
ACCESSION #
90480430

 

Related Articles

  • Electrons in artificial atoms. Gammon, Daniel // Nature;6/22/2000, Vol. 405 Issue 6789, p899 

    Focuses on semiconductor quantum dots. Optical studies of individual quantum dots; Interest in semiconductor quantum dots that interact strongly with light; Details of quantum confinement of electrons; Harnessing quantum mechanical properties.

  • Chemical Traps of Singlet Oxygen as Investigation Method of Mechanisms of Photo-Dynamic Therapy. Berezovska, I. V.; Bilash, O. M.; Rozhytskii, N. N. // Journal of Nano- & Electronic Physics;2013, Vol. 5 Issue 3, p03046-1 

    The processes in photodynamic therapy using semiconductor nanomaterials, namely, quantum dots as photosensitizers were considered. The spectral characteristics of semiconductor quantum dots (CdTe coated by TGA), as well as processes with participation of singlet oxygen which is the active...

  • Time-resolved measurements of Cooper-pair radiative recombination in InAs quantum dots. Mou, S. S.; Irie, H.; Asano, Y.; Akahane, K.; Nakajima, H.; Kumano, H.; Sasaki, M.; Murayama, A.; Suemune, I. // Journal of Applied Physics;8/21/2015, Vol. 118 Issue 7, p073102-1 

    We studied InAs quantum dots (QDs) where electron Cooper pairs penetrate from an adjacent niobium (Nb) superconductor with the proximity effect. With time-resolved luminescence measurements at the wavelength around 1550 nm, we observed luminescence enhancement and reduction of luminescence decay...

  • Spin Thermoelectric Effects in a Strongly Correlated Double Quantum Dot System. Karwacki, Ł. // Acta Physica Polonica, A.;2015, Vol. 127 Issue 2, p478 

    Spin thermoelectric effects through a strongly correlated double quantum dot system embedded in a Aharonov-Bohm ring coupled to two leads with Rashba spin-orbit coupling have been investigated theoretically by means of the fmite-U slave-boson technique. This method provides a reliable...

  • All-optical control of weak-light transport and Fano-like resonance using control-probe technique in a quantum-dot-pillar microcavity system. Rong Yu; Chunling Ding; Duo Zhang; Suzhen Zhang // Journal of Applied Physics;2017, Vol. 121 Issue 14, p1 

    Control of light by light is a current research topic and is important for a variety of fundamental studies and practical applications. Here, we put forward a chip-scale scheme for all-optical control of small-signal photon transport and Fano-like lineshape in a coupled quantum-dot-pillar...

  • The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System. Musikhin, Yu. G.; Cirlin, G. E.; Dubrovskiĭ, V. G.; Samsonenko, Yu. B.; Tonkikh, A. A.; Bert, N. A.; Ustinov, V. M. // Semiconductors;Jul2005, Vol. 39 Issue 7, p820 

    The results of experimental and theoretical studies of quantum dot formation in an InAs/GaAs(100) system in the case of a subcritical width of the deposited InAs layer (1.5–1.6 monolayers) are presented. It is shown that, in the subcritical range of InAs thicknesses (smaller than 1.6...

  • Calculation of the size-distribution function for quantum dots at the kinetic stage of growth. Dubrovskiĭ, V. // Semiconductors;Oct2006, Vol. 40 Issue 10, p1123 

    A theoretical model for calculating the distribution of quantum dots in size in the case of growth according to the Stranski-Krastanow mechanism in the lattice-mismatched heteroepitaxial systems is suggested. The model is based on the general theory of the islands’ nucleation at the...

  • Localization of Holes in an InAs/GaAs Quantum-Dot Molecule. Sobolev, M. M.; Cirlin, G. E.; Samsonenko, Yu. B.; Polyakov, N. K.; Tonkikh, A. A.; Musikhin, Yu. G. // Semiconductors;Jan2005, Vol. 39 Issue 1, p119 

    Deep-level transient spectroscopy is used to study the emission of holes from the states of a vertically coupled system of InAs quantum dots in p-n InAs/GaAs heterostructures. This emission was considered in relation to the thickness of a GaAs interlayer between two layers of InAs quantum dots...

  • Predicting and Understanding Order of Heteroepitaxial Quantum Dots. Friedman, Lawrence H. // Journal of Electronic Materials;Dec2007, Vol. 36 Issue 12, p1546 

    Heteroepitaxial self-assembled quantumdots (SAQDs) will allow breakthroughs in electronics and optoelectronics. SAQDs are a result of Stranski-Krastanow growth, whereby a growing planar film becomes unstable after an initial wetting layer is formed. Common systems are GexSi1-x=Si and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics