Thermal stability of ion-irradiated InGaAs with (sub-) picosecond carrier lifetime

Joulaud, L.; Mangeney, J.; Lourtioz, J.-M.; Crozat, P.; Patriarche, G.
February 2003
Applied Physics Letters;2/10/2003, Vol. 82 Issue 6, p856
Academic Journal
Pump-probe experiments have been used to measure the (sub-) picosecond carrier lifetimes in Au[sup +]and proton-irradiated InGaAs samples, subsequently annealed at various temperatures. For both types of irradiation, the carrier lifetime increases with the annealing temperature. After 600 °C annealing, the defects are totally recovered in proton-irradiated samples, whereas they are still present in Au[sup +]-irradiated samples. The defect annealing kinetics observed in proton-irradiated samples is described well by a Frenkel pair recombination model, thereby indicating the dominance of isolated point defects. In contrast, the model is not adapted to describe the thermal behavior of Au[sup +]-irradiation-induced defects that are clusters of point defects as observed via transmission electronic microscopy. It is clearly shown that heavy-ion irradiated InGaAs exhibits a much higher thermal stability than proton-irradiated InGaAs.


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