TITLE

Chemical composition and local structure of plasma enhanced chemical vapor-deposited Si nanodots and their embedding silica matrix

AUTHOR(S)
Dalba, G.; Daldosso, N.; Fornasini, P.; Grisenti, R.; Pavesi, L.; Rocca, F.; Franzò, G.; Priolo, F.; Iacona, F.
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/10/2003, Vol. 82 Issue 6, p889
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
X-ray absorption measurements in total electron yield mode have been carried out on Si nanodots embedded in amorphous silica produced by plasma enhanced chemical vapor deposition (PECVD). The amount of Si atoms composing the Si nanodots and the chemical composition of the amorphous host matrix has been determined thanks to the comparison with Rutherford backscattering spectrometry data. The influence of nitrogen, incorporated during the PECVD procedure, on the structure of the host silica matrix has been discussed.
ACCESSION #
9036505

 

Related Articles

  • Fabrication of amorphous-carbon-nitride field emitters. Eung Joon Chi; Jae Yeob Shim // Applied Physics Letters;7/21/1997, Vol. 71 Issue 3, p324 

    Utilizes amorphous-carbon-nitride (a-CN) coating by helical resonator plasma-enhanced chemical vapor deposition to improve silicon field emitters. Function of field emitters as electron source; Microstructural investigation of silicon and a-CN coated field emitters; Use of negative electron...

  • Kinetics of Light-Induced Degradation in a-Si:H Films Investigated by Computer Simulation. Meytin, M. N.; Zeman, M.; Budaguan, B. G.; Metselaar, J. W. // Semiconductors;Jun2000, Vol. 34 Issue 6, p717 

    In this work we investigated the stability of a-Si:H films under illumination and following recovery in darkness at different temperatures. The a-Si:H films were fabricated with 55 kHz PECVD and with conventional rf 13.56 MHz PECVD. We measured the steady-state photocurrent and the dark-current...

  • Lateral solid phase crystallization of amorphous Si induced by patterned indium tin oxide on a.... Guendouz, M.; Richard, J.; Joubert, P.; Haji, L. // Applied Physics Letters;9/16/1991, Vol. 59 Issue 12, p1430 

    Examines the deposition of undoped amorphous silicon thin films by plasma-enhanced chemical vapor deposition on a patterned indium tin oxide (ITO) in a glass substrate. Solid-phase crystallization of films; Occurrence of nucleation on ITO; Details on the deposition of silicon films.

  • Thermal quenching and relaxation in doped hydrogenated amorphous silicon deposited by.... Meaudre, R.; Meaudre, M.; i Cabarrocas, P. Roca // Applied Physics Letters;2/8/1993, Vol. 62 Issue 6, p594 

    Examines the thermal quenching and relaxation in doped hydrogenated amorphous silicon by plasma-enhanced chemical vapor deposition. Stability of n- and p-type glow discharge amorphous silicon; Dependence of direct current conductivity for n- and p-type diluted films; Explanation for the...

  • Deposition and extensive light soaking of highly pure hydrogenated amorphous silicon. Kamei, Toshihiro; Hata, Nobuhiro // Applied Physics Letters;4/22/1996, Vol. 68 Issue 17, p2380 

    Describes the deposition and extensive light soaking of highly pure hydrogenated amorphous silicon by ultrahigh vacuum plasma-enhanced chemical vapor deposition system. Reduction of the impurity contents in the bulk of the films; Presence of the impurities at high levels; Defect density caused...

  • Thermal stability and electrical properties of hydrogenated amorphous carbon film. Callegari, A.; Buchanan, D.A. // Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3200 

    Examines the thermal stability and electrical properties of hydrogenated amorphous carbon films via plasma enhanced chemical vapor deposition. Use of helium gas to enhance the thermal stability of the film; Hardness of the material after annealing with several mixtures; Current-voltage...

  • Charge storage in undoped hydrogenated amorphous silicon by ambient atomic force microscopy. Rezek, B.; Mates, T.; Stuchlik, J.; Kočka, J.; Stemmer, A. // Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1764 

    Hydrogenated amorphous silicon (a-Si:H) layers are prepared by plasma-enhanced chemical vapor deposition on metallized glass substrates. Ambient atomic force microscopy (AFM) is employed for both modification and characterization of a-Si:H films. Voltage pulses of up to 35 V are applied as a...

  • Spectroscopic ellipsometry study of hydrogenated amorphous silicon carbon alloy films deposited by plasma enhanced chemical vapor deposition. Basa, D. K.; Abbate, G.; Ambrosone, G.; Coscia, U.; Marino, A. // Journal of Applied Physics;Jan2010, Vol. 107 Issue 2, p023502 

    The optical properties of the hydrogenated amorphous silicon carbon alloy films, prepared by plasma enhanced chemical vapor deposition technique from silane and methane gas mixture diluted in helium, have been investigated using variable angle spectroscopic ellipsometry in the photon energy...

  • Study on the microstructural and overall disorder in hydrogenated amorphous silicon carbon films. Ambrosone, G.; Basa, D. K.; Coscia, U.; Fathallah, M. // Journal of Applied Physics;Dec2008, Vol. 104 Issue 12, p123520 

    Hydrogenated amorphous silicon carbon alloy films of different carbon compositions were prepared by plasma enhanced chemical vapor deposition system using silane and methane with helium dilution and were characterized by structural and optical techniques to understand the microstructural and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics