GaN growth using a low-temperature GaNP buffer on sapphire by metalorganic chemical vapor deposition

Tsukihara, M.; Naoi, Y.; Sakai, S.; Li, H. D.
February 2003
Applied Physics Letters;2/10/2003, Vol. 82 Issue 6, p919
Academic Journal
We developed a buffer layer to grow GaN epilayers by metalorganic chemical vapor deposition. The buffer layer consists of a thin GaN-rich GaNP layer deposited at low temperature (LT) (500 °C) on sapphire substrate, using phosphine (PH[sub 3]) as the phosphorus source. For high-temperature GaN epilayers grown on this type of buffer, full-width at half maximum values from both (0002) and (10&1macr;2) x-ray rocking curves decrease as phosphorus composition in the GaNP buffer increases; a dislocation density observed by transmission electron microscopy is as low as 5 × 10[sup 8] cm[sup -2], which is a factor of 2 less compared to that in a conventional GaN buffer epilayer. These results reveal that LT GaNP can be used as an appropriate buffer for further improving quality of GaN-based films.


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