HfO[sub 2]-based insulating stacks on 4H–SiC(0001)

Afanas’ev, V. V.; Stesmans, A.; Chen, F.; Campbell, S. A.; Smith, R.
February 2003
Applied Physics Letters;2/10/2003, Vol. 82 Issue 6, p922
Academic Journal
Depositing HfO[sub 2] layers on ultrathin thermally grown SiO[sub 2] on 4H-SiC(0001) is demonstrated to yield an insulator with good properties. The stack combines the high quality of the ultrathin SiO[sub 2]/SiC interface and associated high energy barriers for electron and hole injection from SiC with the high dielectric permittivity of HfO[sub 2] (≈ 20). The latter allows application of high electric fields to the SiC surface (up to 3 MV/cm), while keeping the strength of the field in the insulator at a moderate level.


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