Ultrafast optical Kerr effect of Ag–BaO composite thin films

Zhang, Q. F.; Liu, W. M.; Xue, Z. Q.; Wu, J. L.; Wang, S. F.; Wang, D. L.; Gong, Q. H.
February 2003
Applied Physics Letters;2/10/2003, Vol. 82 Issue 6, p958
Academic Journal
We report the ultrafast optical Kerr effect of Ag-BaO composite thin films by the femtosecond time-resolved pump-probe technique. The Ag-BaO thin films with Ag nanoparticles embedded into the BaO semiconductor matrix were prepared using a vacuum evaporation-deposition multimetallic layer method. The third-order nonlinear optical susceptibility of the thin films with the thickness of approximately 300 nm and the volume fraction of Ag nanoparticles in the thin films of about 25% was estimated to be 4.8 × 10[sup -10] esu at the incident laser wavelength of 820 nm. The response time, i.e., the full width at half maximum of the Kerr signal, was as fast as 210 fs. The intrinsic third-order optical nonlinearity, or the optical Kerr effect of the thin films, can be attributed to the change of refractive index due to the intraband transition of electrons from the occupied state near the Fermi level to the unoccupied state in the Ag nanoparticles. Such nonlinearity is further enhanced by the local field effect that is present when the metallic nanoparticles are embedded into the semiconductor matrix.


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