Sensors for sub-ppm NO[sub 2] gas detection based on carbon nanotube thin films

Valentini, L.; Armentano, I.; Kenny, J. M.; Cantalini, C.; Lozzi, L.; Santucci, S.
February 2003
Applied Physics Letters;2/10/2003, Vol. 82 Issue 6, p961
Academic Journal
Carbon nanotubes (CNTs) deposited by plasma-enhanced chemical vapor deposition on Si[sub 3]N[sub 4]/Si substrates have been investigated as resistive gas sensors for NO[sub 2]. Upon exposure to NO[sub 2], the electrical resistance of the CNTs was found to decrease. The maximum variation of resistance to NO[sub 2] was found at an operating temperature of around 165°C. The sensor exhibited high sensitivity to NO[sub 2] gas at concentrations as low as 10 ppb, fast response time, and good selectivity. A thermal treatment method, based on repeated heating and cooling of the films, adjusted the resistance of the sensor film and optimized the sensor response to NO[sub 2].


Related Articles

  • Periodicity and alignment of large-scale carbon nanotubes arrays. Wang, Y.; rybczynski, J.; Wang, D.Z.; Kempa, K.; Ren, Z.F.; Li, W.Z.; Kimball, B. // Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4741 

    Intensive studies have been carried out on controlling the periodicity and alignment of large-scale periodic arrays of carbon nanotubes (CNTs) using plasma-enhanced chemical vapor deposition. Catalytic dots are first prepared by self-assembly of polystyrene spheres on chromium-coated silicon...

  • Electron-cyclotron-resonance plasma-enhanced chemical vapor deposition of epitaxial Si without.... Fukuda, Koichi; Murota, Junichi; Ono, Shoichi; Matsuura, Takashi; Uetake, Hiroaki; Ohmi, Tadahiro // Applied Physics Letters;11/25/1991, Vol. 59 Issue 22, p2853 

    Examines the electron-cyclotron resonance plasma-enhanced chemical vapor deposition of epitaxial silicon without substrate heating by ultraclean processing. Effect of plasma damage on epitaxial growth; Efficacy of hydrogen ion addition to the argon plasma in removing the native oxide layer from...

  • Properties of hydrogenated amorphous silicon films prepared by low-frequency (50 Hz) plasma-enhanced chemical-vapor deposition. Tochitani, G.; Shimozuma, M.; Tagashira, H. // Journal of Applied Physics;7/1/1992, Vol. 72 Issue 1, p234 

    Presents a study the examined the deposition of hydrogenated amorphous silicon films by using plasma-enhanced chemical-vapor deposition (PECVD). Information on hydrogenated amorphous silicon films; Properties of undoped films; Schematic diagram of the PECVD deposition system used for undoped films.

  • Carbon nanotubes grow in room temp process. Bush, Steve // Electronics Weekly;10/30/2002, Issue 2074, p13 

    Reports on carbon nanotubes that grew at room temperature under a study by researchers at the University of Surrey, England as of October 30, 2002. Methodology involved in the study; Information on radio frequency plasma-enhanced chemical vapor deposition; Application.

  • Model based comparison of thermal and plasma chemical vapor deposition of carbon nanotubes. Hash, D. B.; Meyyappan, M. // Journal of Applied Physics;1/1/2003, Vol. 93 Issue 1, p750 

    A model-based comparison of thermal and plasma chemical vapor deposition (CVD) techniques for the growth of carbon nanotubes (CNTs) from methane feedstock is presented. In thermal CVD, the feedstock does not dissociate in the gas phase at temperatures commonly used for single- and multi-walled...

  • Aluminum mediated low temperature growth of crystalline silicon by plasma-enhanced chemical vapor and sputter deposition. Dru¨sedau, Tilo P.; Bla¨sing, Ju¨rgen; Gnaser, Hubert // Applied Physics Letters;3/23/1998, Vol. 72 Issue 12 

    The growth of nanocrystalline silicon on an aluminum underlayer of 4–32 nm thickness on silica substrates by plasma-enhanced chemical vapor deposition (PECVD) or sputter deposition is observed at standard conditions for the preparation of device quality hydrogenated amorphous silicon...

  • On the feasibility of growing dilute CxSi1-x epitaxial alloys. Posthill, J. B.; Rudder, R. A.; Hattangady, S. V.; Fountain, G. G.; Markunas, R. J. // Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p734 

    Dilute CxSi1-x epitaxial films have been grown on Si(100) by remote plasma-enhanced chemical vapor deposition. Carbon concentrations of ∼3 at.% have been achieved at a growth temperature of 725 °C. No evidence for the formation or precipitation of SiC was found using x-ray diffraction...

  • Etch mechanism in the low refractive index silicon nitride plasma-enhanced chemical vapor.... Yue Kuo // Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p144 

    Examines the surface deposition and etching reactions for the plasma enhanced chemical vapor deposition silicon nitride process. Factors attributing the etch mechanism; Relationship between critical power and hydrogen etching mechanism; Implication of deposition rate as a function of plasma...

  • Photoluminescence from nanocrystallites embedded in hydrogenated amorphous silicon films.... Xiang-na Liu; Xiao-wei Wu; Xi-mao Bao; Yu-liang He // Applied Physics Letters;1/10/1994, Vol. 64 Issue 2, p220 

    Examines the visible photoluminescence at room temperature of nanocrystallites in hydrogenated amorphous silicon films. Preparation of films by plasma enhanced chemical vapor deposition using hydrogen-diluted silane; Influence of quantum size effect on emission above the band gap;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics