TITLE

Formation mechanism of nanocatalysts for the growth of silicon nanowires on a hydrogen-terminated Si {111} surface template

AUTHOR(S)
Takeda, S.; Ueda, K.; Ozaki, N.; Ohno, Y.
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/10/2003, Vol. 82 Issue 6, p979
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have observed the formation process of nanocatalysts that act for the growth of Si nanowires by means of UHV scanning tunneling microscopy. Gold-silicon nanocatalysts that we have examined were thought to form on a hydrogen (H)-terminated [111] silicon surface and to expel Si nanowires of extremely high aspect ratio via the vapor-liquid-solid mechanism. We have observed that a nanocatalyst, that is, a droplet of melted gold-silicon alloy of about 5 nm in diameter, is actually formed in a pit on a H-terminated surface in the narrow temperature range around 500°C. We have concluded that, in this specific temperature range, nanocatalysts can be melted, remain mutually isolated, absorb silicon effectively, and expel Si nanowires. Based on the result, we have proposed a method of making a thin template, which facilitates to decide the nucleation sites and the sizes of nanocatalysts, resulting in the precise control of those of Si nanowires.
ACCESSION #
9036472

 

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