Fabrication of in-plane gate transistors on hydrogenated diamond surfaces

Garrido, J. A.; Nebel, C. E.; Todt, R.; Rösel, G.; Amann, M.-C.; Stutzmann, M.; Snidero, E.; Bergonzo, P.
February 2003
Applied Physics Letters;2/10/2003, Vol. 82 Issue 6, p988
Academic Journal
The highly conductive surface layer induced in diamond by hydrogen termination has been used to fabricate in-plane gate transistors. The conductive channel has been separated from the Ohmic gate contacts by insulating thin lines, obtained by using a combination of electron-beam lithography with surface oxidation. Oxidized lines of about 100 nm show excellent blocking properties, with leakage current of 0.3 pA/μm at 100 V and room temperature. In-plane transistor properties are reported for operation at 77 K and room temperature with good saturation characteristic and complete pinch-off.


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