TITLE

Fabrication of in-plane gate transistors on hydrogenated diamond surfaces

AUTHOR(S)
Garrido, J. A.; Nebel, C. E.; Todt, R.; Rösel, G.; Amann, M.-C.; Stutzmann, M.; Snidero, E.; Bergonzo, P.
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/10/2003, Vol. 82 Issue 6, p988
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The highly conductive surface layer induced in diamond by hydrogen termination has been used to fabricate in-plane gate transistors. The conductive channel has been separated from the Ohmic gate contacts by insulating thin lines, obtained by using a combination of electron-beam lithography with surface oxidation. Oxidized lines of about 100 nm show excellent blocking properties, with leakage current of 0.3 pA/μm at 100 V and room temperature. In-plane transistor properties are reported for operation at 77 K and room temperature with good saturation characteristic and complete pinch-off.
ACCESSION #
9036465

 

Related Articles

  • Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic...  // Applied Physics Letters;5/10/1999, Vol. 74 Issue 19, p2866 

    Studies the application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor. Change of the sequence on the formation of source/drain and gate electrodes; Annealing temperature and decrease of contact resistivity.

  • In-based p ohmic contracts to the base layer of AlGaAs/GaAs heterojunction bipolar transistor. Ren, F.; Pearton, S.J.; Hobson, W.S.; Fullowan, T.R.; Emerson, A.B.; Schleich, D.M. // Applied Physics Letters;3/18/1991, Vol. 58 Issue 11, p1158 

    Reports on a low contact resistance indium-based system of obtaining ohmic contacts to p-type gallium arsenide. Observation of excellent morphology and transfer resistance after annealing; Action of silver (Au) as a diffusion barrier to prevent Au spikes which will degrade the performance of...

  • Transmission-electron microscope studies of Au-Ni-Ge based ohmic contacts to GaAs-AlGaAs MODFET device. Rai, A. K.; Ezis, A.; McCormick, A. W.; Petford-Long, Amanda K.; Langer, D. W. // Journal of Applied Physics;5/1/1987, Vol. 61 Issue 9, p4682 

    Investigates the application of gold-germanium-nickel based metallization scheme in obtaining low resistivity ohmic contact to GaAs-AlGaAs based modulation-doped field-effect transistors device. Details on the experiment; Results of the study; Conclusions.

  • Specific contact resistance measurements of ohmic contacts to semiconducting diamond. Hewett, C. A.; Taylor, M. J.; Zeidler, J. R.; Geis, M. W. // Journal of Applied Physics;1/15/1995, Vol. 77 Issue 2, p755 

    Presents a study that investigated specific contact resistance measurements of ohmic contacts to semiconducting diamond. Experimental procedure; Results and discussion; Conclusions.

  • Boron deactivation and the contact resistance problem. Cohen, S. S. // Journal of Applied Physics;3/15/1986, Vol. 59 Issue 6, p2072 

    Discusses the effect which hydrogen deactivation may have on the specific contact resistance, in view of the results of studies that involved several different metallizations. Indication of investigations of ohmic contacts to silicon; Deactivation of active boron acceptors in silicon; Conclusions.

  • Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor with.... Yi-Tae Kim; Jong-Lam Lee // Applied Physics Letters;11/3/1997, Vol. 71 Issue 18, p2656 

    Investigates the palladium/germanium/titanium/gold ohmic contact to aluminum gallium arsenide/indium gallium arsenide pseudomorphic high electron mobility transistor. Cause of a decrease in contact resistivity; Factors responsible for good ohmic contact; Role of the compounds in the creation of...

  • Formation of ohmic contacts to p-type diamond using carbide forming metals. Nakanishi, Jiro; Otsuki, A.; Oku, T.; Ishiwata, O.; Murakami, Masanori // Journal of Applied Physics;8/15/1994, Vol. 76 Issue 4, p2293 

    Presents a study which investigated the formation of ohmic contacts to p-type diamond using carbide forming metals. Estimation of the acceptor concentrations; Features of a diamond semiconductor; Techniques used in the study of the applicability of semiconducting diamond films to the electronic...

  • Direct observation of Schottky to Ohmic transition in Al-diamond contacts using real-time photoelectron spectroscopy. Evans, D. A.; Roberts, O. R.; Vearey-Roberts, A. R.; Langstaff, D. P.; Twitchen, D. J.; Schwitters, M. // Applied Physics Letters;9/24/2007, Vol. 91 Issue 13, p132114 

    Real-time photoelectron spectroscopy and in situ electrical measurements have been applied to the formation of Al contacts on p-type diamond. At 294 K, an initially uniform Al film induces band bending in the diamond consistent with the measured (current-voltage) barrier height of 1.05 V. The...

  • Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes. Weidemann, O.; Hermann, M.; Steinhoff, G.; Wingbrant, H.; Lloyd Spetz, A.; Stutzmann, M.; Eickhoff, M. // Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p773 

    The hydrogen response of Pd:GaN Schottky diodes, prepared by in situ and ex situ deposition of catalytic Pd Schottky contacts on Si-doped GaN layers is compared. Ex situ fabricated devices show a sensitivity towards molecular hydrogen, which is about 50 times higher than for in situ deposited...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics