TITLE

Strain relaxation correlated with the transport properties of AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy

AUTHOR(S)
Jeganathan, Kulandaivel; Ide, Toshihide; Shimizu, Mitsuaki; Okumura, Hajime
PUB. DATE
February 2003
SOURCE
Journal of Applied Physics;2/15/2003, Vol. 93 Issue 4, p2047
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the transport properties of two-dimensional electron gases confined at the AlN/GaN heterointerface grown by plasma-assisted molecular-beam epitaxy on (0001) sapphire substrates. Two-dimensional (2D) sheet carrier density has been found to vary with the AlN barrier layer thickness due to the existence of strain-induced piezoelectric polarization field at the heterointerface. The highest 2D sheet carrier density achieved was 2.3 × 10[sup 13] cm[sup -2] for a 35-Å,-thick AlN barrier layer. Further, with the increase of the AlN barrier width about 50∼60 Å, a drop in 2D sheet carrier density was noticed due to the annihilation of piezoelectric polarization, caused by the partial tensile-strain relaxation of the AlN barrier layer. Inconsistently, the 2D electron mobility was high: about 853 cm²/V s. The interface roughness of the heterostructure was estimated to be 6 Å, rms for a 50-Å-thick AlN barrier layer, using grazing incidence x-ray reflectivity studies.
ACCESSION #
9028759

 

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