White light-emitting diodes of GaN-based Sr[sub 2]SiO[sub 4]:Eu and the luminescent properties

Park, Joung Kyu; Lim, Mi Ae; Kim, Chang Hae; Park, Hee Dong; Park, Joon Taik; Choi, Se Young
February 2003
Applied Physics Letters;2/3/2003, Vol. 82 Issue 5, p683
Academic Journal
We have synthesized a Eu[sup 2+]-activated Sr[sub 2]SiO[sub 4] yellow phosphor and investigated an attempt to develop white light-emitting diodes (LEDs) by combining it with a GaN blue LED chip. Two distinct emission bands from the GaN-based LED and the Sr[sub 2]SiO[sub 4]:Eu phosphor are clearly observed at 400 nm and at around 550 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that GaN (400-nm chip)-based Sr[sub 2]SiO[sub 4]:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460-nm chip)-based YAG:Ce.


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