TITLE

Compensation mechanisms in low-temperature-grown Ga[sub 1-x]Mn[sub x]As investigated by scanning tunneling spectroscopy

AUTHOR(S)
Mahieu, G.; Condette, P.; Grandidier, B.; Nys, J. P.; Allan, G.; Stiévenard, D.; Ebert, Ph.; Shimizu, H.; Tanaka, M.
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/3/2003, Vol. 82 Issue 5, p712
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ga[sub 1-x]Mn[sub x]As layers with Mn composition of up to 6.2% are investigated by cross-sectional scanning tunneling microscopy and spectroscopy. We identify in the tunneling spectra contributions from Mn[sup -, sub Ga] acceptor states, compensating As[sup 2+, sub Ga] donor states, and additional compensating donor states, which we suggest to be Mn[sup 2+, sub i] interstitials. On basis of the observed Fermi level shift and a charge carrier compensation analysis, we deduce the concentration of Mn[sup 2+, sub i] interstitials. Furthermore, scanning tunneling microscopy images suggest an inhomogeneous distribution of Mn dopant atoms.
ACCESSION #
8989313

 

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