ZnO-based transparent thin-film transistors

Hoffman, R. L.; Norris, B. J.; Wager, J. F.
February 2003
Applied Physics Letters;2/3/2003, Vol. 82 Issue 5, p733
Academic Journal
Highly transparent ZnO-based thin-film transistors (TFTs) are fabricated with optical transmission (including substrate) of ∼75% in the visible portion of the electromagnetic spectrum. Currentvoltage measurements indicate n-channel, enhancement-mode TFT operation with excellent drain current saturation and a drain current on-to-off ratio of ∼10[sup 7]. Threshold voltages and channel mobilities of devices fabricated to date range from ∼10 to 20 V and ∼0.3 to 2.5 cm²/V s, respectively. Exposure to ambient light has little to no observable effect on the drain current. In contrast, exposure to intense ultraviolet radiation results in persistent photoconductivity, associated with the creation of electron-hole pairs by ultraviolet photons with energies greater than the ZnO band gap. Light sensitivity is reduced by decreasing the ZnO channel layer thickness. One attractive application for transparent TFTs involves their use as select-transistors in each pixel of an active-matrix liquid-crystal display.


Related Articles

  • Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering. Carcia, P. F.; McLean, R. S.; Reilly, M. H.; Nunes, G. // Applied Physics Letters;2/17/2003, Vol. 82 Issue 7, p1117 

    We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm²/V s and an on/off ratio> 10[sup 6]. These ZnO films had resistivity ∼10[sup 5] ohm cm, with high optical...

  • Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors. Keun Woo Lee; Kon Yi Heo; Hyun Jae Kim // Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG 

    We studied the optical and electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors (SB-IGZO/SWNTs blend TFTs). When the SB-IGZO/SWNTs blend TFTs were illuminated at a wavelength of 660 nm, the off-state drain current slightly...

  • Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric. Suresh, Arun; Novak, Steven; Wellenius, Patrick; Misra, Veena; Muth, John F. // Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p123501 

    A transparent memory device has been developed based on an indium gallium zinc oxide thin film transistor by incorporating platinum nanoparticles in the gate dielectric stack as the charge storage medium. The transfer characteristics of the device show a large clockwise hysteresis due to...

  • The influence of visible light on transparent zinc tin oxide thin film transistors. Görrn, P.; Lehnhardt, M.; Riedl, T.; Kowalsky, W. // Applied Physics Letters;11/5/2007, Vol. 91 Issue 19, p193504 

    The characteristics of transparent zinc tin oxide thin film transistors (TTFTs) upon illumination with visible light are reported. Generally, a reversible decrease of threshold voltage Vth, saturation field effect mobility μsat, and an increase of the off current are found. The time scale of...

  • Electronic properties of polyvinylpyrrolidone at the zinc oxide nanoparticle surface. Bubel, Simon; Mechau, Norman; Schmechel, Roland // Journal of Materials Science;Dec2011, Vol. 46 Issue 24, p7776 

    We investigated the electrical effects of polyvinylpyrrolidone (PVP), used as a dispersion agent in zinc oxide (ZnO) nanodispersions. We found PVP reduces the high surface conductivity and atmospheric sensitivity. Compared with polymer free ZnO thin films, the nanoparticulate layers with PVP...

  • ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulators. Siddiqui, J.; Cagin, E.; Chen, D.; Phillips, J. D. // Applied Physics Letters;5/22/2006, Vol. 88 Issue 21, p212903 

    The electrical characteristics of ZnO thin-film transistors with high-k (Ba,Sr)TiO3 gate dielectrics are presented. The ZnO and (Ba,Sr)TiO3 thin films were deposited on Pt, exhibiting polycrystalline characteristics. The thin-film devices demonstrated transistor behavior over the range of...

  • High performance indium-zinc-oxide thin-film transistors fabricated with a back-channel-etch-technique. Xu, Hua; Lan, Linfeng; Xu, Miao; Zou, Jianhua; Wang, Lei; Wang, Dan; Peng, Junbiao // Applied Physics Letters;12/19/2011, Vol. 99 Issue 25, p253501 

    Indium-zinc-oxide thin-film transistors (TFTs) with back-channel-etch (BCE) structure were demonstrated. A stacked structure of Mo/Al/Mo was used as the source/drain electrodes and patterned by a wet-etch-method. Good etching profile with few residues on the channel was obtained. The TFT showed...

  • Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer. Eun Lee, Jeong; Sharma, Bhupendra K.; Lee, Seoung-Ki; Jeon, Haseok; Hee Hong, Byung; Lee, Hoo-Jeong; Ahn, Jong-Hyun // Applied Physics Letters;3/18/2013, Vol. 102 Issue 11, p113112 

    The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene...

  • Photo stability of solution-processed low-voltage high mobility zinc-tin-oxide/ZrO2 thin-film transistors for transparent display applications. Ha, Tae-Jun; Dodabalapur, Ananth // Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p123506 

    We report solution-processed low-voltage zinc-tin-oxide (ZTO)/zirconium-oxide thin-film transistors (TFTs) possessing a field-effect mobility of ∼10 cm2/Vs, a threshold voltage of 0.1 V, and an on-off current ratio of ∼1 × 109. These TFTs exhibit very small hysteresis windows in...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics