Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels

Vitusevich, S. A.; Danylyuk, S. V.; Klein, N.; Petrychuk, M. V.; Avksentyev, A. Yu.; Sokolov, V. N.; Kochelap, V. A.; Belyaev, A. E.; Tilak, V.; Smart, J.; Vertiatchikh, A.; Eastman, L. F.
February 2003
Applied Physics Letters;2/3/2003, Vol. 82 Issue 5, p748
Academic Journal
We address experimental and theoretical study of a two-dimensional electron gas transport at low and moderate electric fields. The devices under study are group-III nitride-based (AlGaN/GaN) gateless heterostructures grown on sapphire. The transmission line model patterns of different channel lengths, L, and of the same channel width are used. A strong dependence of the device I-V characteristics on the channel length has been found. We have developed a simple theoretical model to adequately describe the observed peculiarities in the I-V characteristics measured in steady-state and pulsed (10[sup -6] S) regimes. The effect of the Joule heating of a heterostructure is clearly distinguished. The thermal impedance and the channel temperature rise caused by the Joule self-heating have been extracted for the devices of different L at different values of dissipated power. The current reduction due to both self-heating and hot-electron effects is determined quantitatively as a function of the electric field.


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