TITLE

Nanoscale organic transistors that use source/drain electrodes supported by high resolution rubber stamps

AUTHOR(S)
Zaumseil, Jana; Someya, Takao; Bao, Zhenan; Loo, Yueh-Lin; Cirelli, Raymond; Rogers, John A.
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/3/2003, Vol. 82 Issue 5, p793
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Soft contact lamination and metal-coated elastomeric stamps provide the basis for a convenient and noninvasive approach to establishing high resolution electrical contacts to electroactive organic materials. The features of relief on the stamps define, with nanometer resolution, the geometry and separation of electrically independent electrodes that are formed by uniform, blanket evaporation of a thin metal film onto the stamp. Placing this coated stamp on a flat substrate leads to "wetting" and atomic scale contact that establishes efficient electrical connections. When the substrate supports an organic semiconductor, a gate dielectric and a gate, this soft lamination process yields high performance top contact transistors with source/drain electrodes on the stamp. We use this approach to investigate charge transport through pentacene in transistor structures with channel lengths that span more than three decades: from 250 µm to ∼150 nm. We also report some preliminary measurements on charge transport through organic monolayers using the same laminated transistor structures.
ACCESSION #
8989198

 

Related Articles

  • Maskless writing of a flexible nanoscale transistor with Au-contacted carbon nanotube electrodes. Dockendorf, Cedric P. R.; Poulikakos, Dimos; Hwang, Gilgueng; Nelson, Bradley J.; Grigoropoulos, Costas P. // Applied Physics Letters;12/10/2007, Vol. 91 Issue 24, p243118 

    A flexible polymer field effect transistor with a nanoscale carbon nanotube channel is conceptualized and realized herein. Carbon nanotubes (CNTs) were dispersed on a polyimide substrate and marked in an scanning electron microscope with focused ion beam such that they could be contacted with...

  • Nonvolatile electrical bistability of organic/metal-nanocluster/organic system. Ma, Liping; Pyo, Seungmoon; Ouyang, Jianyong; Xu, Qianfei; Yang, Yang // Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1419 

    Two-terminal electrical bistable devices have been fabricated using a sandwich structure of organic/ metal/organic as the active medium, sandwiched between two external electrodes. The nonvolatile electrical bistability of these devices can be controlled using a positive and a negative...

  • Achieving ambipolar vertical organic transistors via nanoscale interface modification. Li, Sheng-Han; Xu, Zheng; Ma, Liping; Chu, Chih-Wei; Yang, Yang // Applied Physics Letters;8/20/2007, Vol. 91 Issue 8, p083507 

    Organic field-effect transistors have been the subject of much recent inquiry due to their unique properties. Here, the authors report an ambipolar vertical organic field-effect transistor, which consists of a capacitor cell vertically stacked with an organic active cell, separated by a thin...

  • Evidence for the alteration of an organic/metal interface resulting from the formation of a broad... Bonello, B.; Armand, F. // Journal of Applied Physics;11/1/1999, Vol. 86 Issue 9, p4959 

    Presents information on a study which investigated the changes that occurred at the organic/metal interface resulting from electrode deposition using picosecond ultrasonics. Experimental details; Results and discussion; Conclusions.

  • Organic metal electrodes for controlled p- and n-type carrier injections in organic field-effect transistors. Takahashi, Y.; Hasegawa, T.; Abe, Y.; Tokura, Y.; Saito, G. // Applied Physics Letters;2/13/2006, Vol. 88 Issue 7, p073504 

    Fine control of p-, n-, and ambipolar-type field-effect transistor (FET) operations is successfully demonstrated in prototypical single-crystal organic FETs with use of chemically tunable nature of Fermi energy in tetrathiafulvalene-tetracyanoguinodimethane-based organic metal electrodes....

  • Tuning of electrical characteristics in networked carbon nanotube field-effect transistors using thiolated molecules. Lee, Chun Wei; Zhang, Keke; Tantang, H.; Lohani, Anup; Mhaisalkar, S. G.; Li, Lain-Jong; Nagahiro, T.; Tamada, K.; Chen, Y. // Applied Physics Letters;9/3/2007, Vol. 91 Issue 10, p103515 

    The authors examine the effects of adsorption of four thiolated molecules (HS–C10H21, HS–C11H22OH, HS–C10H20COOH, and HS–C2H4C4F9) on the electrical characteristics of single-walled carbon nanotube network FETs (SNFETs). Work function of the electrodes was measured...

  • Organic nanochannel field-effect transistor with organic conductive wires. Sakai, Masatoshi; Nakamura, Masakazu; Kudo, Kazuhiro // Applied Physics Letters;2/5/2007, Vol. 90 Issue 6, p062101 

    The authors fabricated an organic nanochannel field-effect transistor (FET) that is self-wired with highly conductive organic conductors. The advantages of the transistor are a short channel (approximately 400 nm in length) and spontaneous formation of an active layer of the FET. Further, in...

  • Tunable organic transistors that use microfluidic source and drain electrodes. Maltezos, George; Nortrup, Robert; Seokwoo Jeon; Zaumseil, Jana; Rogers, John A. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p2067 

    This letter describes a type of transistor that uses conducting fluidic source and drain electrodes of mercury which flow on top of a thin film of the organic semiconductor pentacene. Pumping the mercury through suitably designed microchannels changes the width of the transistor channel and,...

  • Highly stretchable carbon nanotube transistors enabled by buckled ion gel gate dielectrics. Meng-Yin Wu; Juan Zhao; Feng Xu; Tzu-Hsuan Chang; Jacobberger, Robert M.; Zhenqiang Ma; Arnold, Michael S. // Applied Physics Letters;3/1/2015, Vol. 107 Issue 5, p1 

    Deformable field-effect transistors (FETs) are expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins. We previously demonstrated stretchable FETs based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics