Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor

Estrada, Sarah; Xing, Huili; Stonas, Andreas; Huntington, Andrew; Mishra, Umesh; DenBaars, Steven; Coldren, Larry; Hu, Evelyn
February 2003
Applied Physics Letters;2/3/2003, Vol. 82 Issue 5, p820
Academic Journal
We describe an n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor, formed via wafer fusion of a p-GaAs base to an n-GaN collector. Wafer fusion was carried out at 750 °C for 1 h. Devices utilized a thick base (0.15 µm) and exhibited limited common-emitter current gain (0.2-0.5) at an output current density of ∼100 A/cm². Devices were operated to V[sub CE] greater than 20 V, with a low V[sub CE] offset (1 V). Improvements in both device structure and wafer fusion conditions should provide further improvements in device performance.


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