Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region

Wang, Ding; Donetsky, Dmitry; Kipshidze, Gela; Lin, Youxi; Shterengas, Leon; Belenky, Gregory; Sarney, Wendy; Svensson, Stefan
July 2013
Applied Physics Letters;7/29/2013, Vol. 103 Issue 5, p051120
Academic Journal
InAs0.6Sb0.4/Al0.75In0.25Sb-based barrier photodetectors were grown metamorphically on compositionally graded Ga1-xInxSb buffer layers and GaSb substrates by molecular beam epitaxy. At the wavelength of 8 μm and T = 150 K, devices with 1-μm thick absorbers demonstrated an external quantum efficiency of 18% under a bias voltage of 0.45 V.


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