High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy

Natali, F.; Byrne, D.; Dussaigne, A.; Grandjean, N.; Massies, J.; Damilano, B.
January 2003
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p499
Academic Journal
We report on the growth by molecular-beam epitaxy on 2 in. sapphire substrates of crack-free Al[sub x]Ga[sub 1-x]N/GaN distributed Bragg reflectors (DBRs) with high-Al composition (x=0.5). This is achieved by introducing a thick AlN interlayer and strain mediating Al[sub y]Ga[sub 1-y]N layer between the substrate and DBR. The relatively larger refractive index ratio between Al[sub 0.5]Ga[sub 0.5]N and GaN permits one to obtain a quite large spectral stopband width (49 nm) and a high reflectance value (69%) for only eight mirror periods.


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