Three-color integration on rare-earth-doped GaN electroluminescent thin films

Wang, Y. Q.; Steckl, A. J.
January 2003
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p502
Academic Journal
We have realized full color integration on rare-earth-doped thin-film electroluminescent (EL) GaN using lateral integration. Tm, Er, and Eu dopants were in situ doped into GaN thin films during growth in order to obtain blue, green, and red emission, respectively. Three color pixel arrays have been fabricated using spin-on-glass films as the sacrificial layers for lift-off lithography. The pixel dimensions are 0.2 × 0.7 mm², and the separation is 0.2 mm. dc EL devices were fabricated using indium tin oxide transparent electrodes. Typical applied voltage was 30-40 V. The blue emission from Tm-doped GaN has a peak at 477 nm, the green emission from Er-doped GaN has two peaks at 537 and 558 nm, while the red emission from Eu-doped GaN has a peak at 621 nm.


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