TITLE

Linewidth enhancement factor of lattice-matched InGaNAs/GaAs quantum wells

AUTHOR(S)
Seo, Woon-Ho; Donegan, John F.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The linewidth enhancement factors of lattice-matched 1.5 µm wavelength InGaNAs/GaAs and InGaAs/InP single-quantum-well structures are calculated using microscopic theory and 10 × 10 effective-mass Hamiltonian. InGaNAs/GaAs quantum wells have a lower threshold carrier density and higher differential gain resulting in a lower linewidth enhancement factor compared with InGaAs/InP quantum wells. For applications which require high gain and carrier densities, InGaNAs/GaAs quantum wells have a much lower linewidth enhancement factor over a temperature range 300-400 K. This lower value originates from the large electron effective mass caused by the nitrogen incorporation. The linewidth enhancement factor of InGaNAs is almost clamped as a function of carrier density and temperature compared with InGaAs. This effect is due to the enhanced match between conduction-valence band density of states and the improved electron confinement caused by the large conduction band offset and deep quantum wells.
ACCESSION #
8954597

 

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