TITLE

Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells

AUTHOR(S)
Manasreh, M. O.; Friedman, D. J.; Ma, W. Q.; Workman, C. L.; George, C. E.; Salamo, G. J.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p514
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoluminescence (PL) spectra of interband transitions in GaInNAs/GaAs single quantum wells grown by metalorganic chemical vapor deposition on semi-insulating GaAs substrates were measured at 77 K for several samples grown with different In compositions and dimethylhydrazine (DMH)/III ratios. The results show that the PL intensity increases as the In mole fraction is increased from 0% to 25%, but the PL intensity is degraded for samples with an In mole fraction of 30% or higher. The peak position energies of the PL spectra were investigated as a function of the DMH/III ratio. Thermal annealing effect induced a blueshift in the PL spectra peak position energy in samples grown with high DMH/III ratios.
ACCESSION #
8954594

 

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