TITLE

Effect of Ag photodoping on deep-level emission spectra of ZnO epitaxial films

AUTHOR(S)
Lee, Hyun-Yong; Ko, Hang-Ju; Yao, Takafumi
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p523
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Effect of Ag photodoping into ZnO films grown by molecular beam epitaxy has been examined via the real-time measurement of photoluminescence (PL) spectra using a HeCd laser at room temperature. While an asymmetric deep-level (green-yellow) broadband (D) is observed in PL of as-grown ZnO, it appears to change to two distinct bands (at 2.29 and 2.50 eV) in the illuminated Ag/ZnO. From the result of a Gaussian fitting, the yellow band at 2.29 eV is evaluated to relate with photodoped Ag atoms. With increasing the laser illumination time (photodoping), the PL intensity of broadband (I[sub D]) decreases and contrarily, the intensity of the near band edge emission observed at 3.297 eV (I[sub NB]) shows a tendency to increase. We believe that the Ag can be photodoped into ZnO at 300 K and it contributes to the suppression of deep-level band, which results in an increase of I[sub NB].
ACCESSION #
8954591

 

Related Articles

  • Properties of the shallow O-related acceptor level in ZnSe. Chen, J.; Zhang, Y.; Skromme, B. J.; Akimoto, K.; Pachuta, S. J. // Journal of Applied Physics;10/15/1995, Vol. 78 Issue 8, p5109 

    Presents information on a study which investigated the properties of the shallow oxygen-related acceptor level in zinc oxide-doped molecular beam epitaxy material. Methods; Results; Discussion.

  • Terahertz radiation from delta-doped GaAs. Birkedal, D.; Hansen, O. // Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p79 

    Examines the terahertz emission from four delta-doped molecular beam epitaxially grown GaAs. Effect of the delta-doped layer on the emitted THz pulse amplitude; Changes in the polarity of the THz pulses; Usage of photoreflectance spectroscopy during the investigation of electric fields in the...

  • Ag–N dual-accept doping for the fabrication of p-type ZnO. Bin, Wang; Yue, Zhao; Jiahua, Min; Wenbin, Sang // Applied Physics A: Materials Science & Processing;Mar2009, Vol. 94 Issue 4, p715 

    P-type ZnO was realized by dual-doping with nitrogen and silver via electrostatic-enhanced ultrasonic spray pyrolysis. The structural, electrical, and optical properties were explored by XRD, Hall-effect, and optical transmission spectra. The resistivity of ZnO:(N,Ag) film was found to be 56...

  • Donor-acceptor pair emission enhancement in mass-transport-grown GaN. Paskova, T.; Arnaudov, B.; Paskov, P. P.; Goldys, E. M.; Hautakangas, S.; Saarinen, K.; Södervall, U.; Monemar, B. // Journal of Applied Physics;8/1/2005, Vol. 98 Issue 3, p033508 

    A dominating donor-acceptor pair (DAP) emission at about 3.27 eV is observed in the photoluminescence and cathodoluminescence spectra of intentionally undoped mass-transport (MT)-grown GaN, while only a weak presence of the DAP emission is recorded in the as-grown hydride vapor phase epitaxial...

  • Preferred heteroepitaxial orientations of ZnO nanorods on Ag. Floro, J. A.; Michael, J. R.; Brewer, L. N.; Hsu, J. W. P. // Journal of Materials Research;Jul2010, Vol. 25 Issue 7, p19 

    Wurtzite ZnO nanorods were grown from solution onto coarse-grain bulk polycrystalline Ag substrates to explore the nature of preferred heteroepitaxial orientations. ZnO nanorods grow copiously on grains with <111> and <001> surface normals. Two epitaxial orientations were observed: {0001} ZnO ?...

  • Photoelectric Properties of ZnO Films Doped with Cu and Ag Acceptor Impurities. Gruzintsev, A. N.; Volkov, V. T.; Yakimov, E. E. // Semiconductors;Mar2003, Vol. 37 Issue 3, p259 

    The influence exerted by doping with Cu and Ag acceptor impurities at a content of 1, 3, and 5 at. % on the luminescence and photoconductivity of zinc oxide films has been studied. Electron-beam evaporation in optimal modes has been used to obtain films with predominant luminescence in the UV...

  • Doping of the nanocrystalline semiconductor zinc oxide with the donor indium. Agne, Th.; Guan, Z.; Li, X.M.; Wolf, H.; Wichert, Th.; Natter, H.; Hempelmann, R. // Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1204 

    Doping of the nanocrystalline semiconductor ZnO with the donor [sup 111]In was achieved by the incorporation of [sup 111]In atoms during the growth process followed by a hydrothermal treatment at 473 K. The incorporation of [sup 111]In on substitutional Zn sites was shown by the perturbed...

  • Mechanism of carrier transport in aluminum-doped zinc oxide. Tahar, Radhouane Bel Hadj; Tahar, Noureddine Bel Hadj // Journal of Applied Physics;10/15/2002, Vol. 92 Issue 8, p4498 

    The conduction mechanism in aluminum-doped zinc oxide has been studied. Structural investigation shows that crystallographic orientation as well as grain boundary scattering can be neglected. Based on the analysis of the Hall mobility, it has been found that scattering at neutral and ionized...

  • High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy. Xiu, F. X.; Yang, Z.; Mandalapu, L. J.; Zhao, D. T.; Liu, J. L.; Beyermann, W. P. // Applied Physics Letters;10/10/2005, Vol. 87 Issue 15, p152101 

    Reproducible Sb-doped p-type ZnO films were grown on n-Si (100) by electron-cyclotron-resonance-assisted molecular-beam epitaxy. The existence of Sb in ZnO:Sb films was confirmed by low-temperature photoluminescence measurements. An acceptor-bound exciton (A°X) emission was observed at 3.358...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics