Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

Koida, T.; Chichibu, S. F.; Uedono, A.; Tsukazaki, A.; Kawasaki, M.; Sota, T.; Segawa, Y.; Koinuma, H.
January 2003
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p532
Academic Journal
Influences of point defects on the nonradiative processes in ZnO were studied using steady-state and time-resolved photoluminescence (PL) spectroscopy making a connection with the results of positron annihilation measurement. Free excitonic PL intensity naturally increased with the increase in the nonradiative PL lifetime (Ï„[sub nr]). Density or size of Zn vacancies (V[sub Zn]) decreased and Ï„[sub nr] increased with increasing growth temperature in heteroepitaxial films grown on a ScAlMgO[sub 4] substrate. Use of homoepitaxial substrate further decreased the V[sub Zn] density. However, Ï„[sub nr] was the shortest for the homoepitaxial film; i.e., no clear dependence was found between Ï„[sub nr] and density/ size of V[sub Zn] or positron scattering centers. The results indicated that nonradiative recombination processes are not solely governed by single point defects, but by certain defect species introduced by the presence of V[sub Zn] such as vacancy complexes.


Related Articles

  • Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells. Wen, Xiaoming; Davis, Jeffrey A.; Van Dao, Lap; Hannaford, Peter; Coleman, V. A.; Tan, H. H.; Jagadish, C.; Koike, K.; Sasa, S.; Inoue, M.; Yano, M. // Applied Physics Letters;5/28/2007, Vol. 90 Issue 22, p221914 

    The authors investigate the effect of oxygen implantation and rapid thermal annealing in ZnO/ZnMgO multiple quantum wells using photoluminescence. A blueshift in the photoluminescence is observed in the implanted samples. For a low implantation dose, a significant increase of activation energy...

  • Optical and Microstructure Analysis of ZnO Particles via Sonication Effect. Ooi, M. D. Johan; Aziz, A. Abdul; Abdullah, M. J. // AIP Conference Proceedings;5/25/2011, Vol. 1341 Issue 1, p15 

    In this work, a study on the effect of sonication treatment to the optical and microstructure of ZnO synthesized via precipitation technique has been carried out. ZnO rod- like structure with diameter of 235 nm and 800 nm in length was observed for sample undergoes sonication treatment. Whilst...

  • Reduction of nonradiative recombination center for ZnO films grown under Zn-rich conditions by metal organic chemical vapor deposition. Fujimoto, Eiji; Watanabe, Kenji; Matsumoto, Yuji.; Koinuma, Hideomi; Sumiya, Masatomo // Applied Physics Letters;9/27/2010, Vol. 97 Issue 13, p131913 

    ZnO films were grown by metalorganic chemical vapor deposition using the repeated temperature modulation in an H2 ambient. The crystalline quality, as defined by the full-width at half-maximum of the ω (1011) reflection, was found to be correlated with the...

  • Activation energy for the photoluminescence W center in silicon. Schultz, Peter J.; Thompson, T.D. // Applied Physics Letters;1/6/1992, Vol. 60 Issue 1, p59 

    Presents a systematic study of the substrate temperature dependence for photoluminescence W center formation. Release of point defects from secondary defect complexes; Comparison between postirradiation and conventional annealing; Deduction of activation energy for the growth of W center

  • Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO[sub2] layers. Kim, H.B. // Journal of Applied Physics;8/15/2000, Vol. 88 Issue 4, p1851 

    Examines the effects of silicon-dose on defect-related photoluminescence (PL) in silicon-implanted silicon-oxide layers. Use of electron spin resonance and PL in the characterization of defects; Existence of a dose window for a maximum intensity of luminescence; Induction of density ratio of...

  • Characterization of ZnO varistor degradation using lifetime positron-annihilation spectroscopy. Ramanachalam, M. S.; Rohatgi, A.; Schaffer, J. P.; Gupta, T. K. // Journal of Applied Physics;6/15/1991, Vol. 69 Issue 12, p8380 

    Focuses on a study which investigated the influence of time and applied bias on the concentration of point defects in zinc oxide varistors using lifetime positron-annihilation spectroscopy (PAS). Experimental procedure; Analysis of the current measurements; Correlation of PAS data with the...

  • Cathodoluminescence study of visible luminescence in hydrothermal ZnO crystals. Mass, J.; Avella, M.; Jiménez, J.; Callahan, M.; Grant, E.; Rakes, K.; Bliss, D.; Wang, B. // Applied Physics A: Materials Science & Processing;Jul2007, Vol. 88 Issue 1, p95 

    We present a study of the visible luminescence in ZnO hydrothermal crystals. The study is carried out on oxygen polarity basal plane (000-1) plates that are sliced through several distinct growth sectors of the crystal. The plates reveal three distinct regions that display differences in the...

  • Effect of Lithium Codoping on Dual Acceptor Doped ZnO. Kannan, R.; Rajagopan, S.; Murugaraj, R.; Haridass, B.; Sivagamasundari, A.; Vanitha, D.; Selvarani, V.; Oudayakumar, K.; Arumugam, S.; Radheep, R. Mohan // AIP Conference Proceedings;7/16/2011, Vol. 1349 Issue 1, p1133 

    The origin of ferromagnetism in zinc oxide is not yet clear due to many reasons like nature of native defects, role of dopant ions, impurities etc. Numerous contrary reports are available regarding the appearance of RTFM in codoped zinc oxide. Reproducibility, complicated wet chemical synthesis,...

  • Photoluminescence characteristics of undoped and terbium chloride doped zinc oxide films deposited by spray pyrolysis. Falcony, C.; Ortiz, A.; García, M.; Helman, J. S. // Journal of Applied Physics;4/1/1988, Vol. 63 Issue 7, p2378 

    Presents a study which examined the photoluminescence characteristics of undoped and terbium chloride-doped zinc oxide films deposited by the spray pyrolysis technique. Information on the light emission of the doped films; Methodology; Decay of luminescence with time.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics