TITLE

Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

AUTHOR(S)
Koida, T.; Chichibu, S. F.; Uedono, A.; Tsukazaki, A.; Kawasaki, M.; Sota, T.; Segawa, Y.; Koinuma, H.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p532
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Influences of point defects on the nonradiative processes in ZnO were studied using steady-state and time-resolved photoluminescence (PL) spectroscopy making a connection with the results of positron annihilation measurement. Free excitonic PL intensity naturally increased with the increase in the nonradiative PL lifetime (Ï„[sub nr]). Density or size of Zn vacancies (V[sub Zn]) decreased and Ï„[sub nr] increased with increasing growth temperature in heteroepitaxial films grown on a ScAlMgO[sub 4] substrate. Use of homoepitaxial substrate further decreased the V[sub Zn] density. However, Ï„[sub nr] was the shortest for the homoepitaxial film; i.e., no clear dependence was found between Ï„[sub nr] and density/ size of V[sub Zn] or positron scattering centers. The results indicated that nonradiative recombination processes are not solely governed by single point defects, but by certain defect species introduced by the presence of V[sub Zn] such as vacancy complexes.
ACCESSION #
8954588

 

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