Spin injection through different g-factor heterointerfaces using negative trions for spin detection

Ghali, M.; Kossut, J.; Heiss, W.
January 2003
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p541
Academic Journal
We demonstrate using the formation and the optical signatures of negatively charged excitonic complexes, trions, as a sensitive detector for spin injection. In our study, spin-polarized electrons are optically injected from a Cd[sub 0.97]Mn[sub 0.03]Te spin aligning layer to CdTe quantum well (QW) via a nonmagnetic Cd[sub 0.98]Mg[sub 0.02]Te spacer. In photoluminescence measurements, for the excitation above the Cd[sub 0.97]Mn[sub 0.03]Te band gap, we find a gradual change in the circular polarization of the trion emission from a negative value at low magnetic fields to a positive one at high fields with a transition at B∼3 T. This polarization behavior is in contrast to that for selective excitation below the spin aligner band gap and evidences unambiguously a redistribution of the electron spin population between the electron Zeeman sublevels in the QW due the spin injection of effectively polarized electrons from the magnetic spin injector.


Related Articles

  • Electronics in a spin. Roukes, Michael L. // Nature;6/14/2001, Vol. 411 Issue 6839, p747 

    Reports on the advances in semiconductor spintronics. Interesting applications of semiconductor spintronics; Factors that drive the advances in spintronics; Prerequisites for success in semiconductor spintronics.

  • Persistent sourcing of coherent spins for multifunctional semiconductor spintronics. Malajovich, I.; Berry, J.J.; Samarth, N.; Awschalom, D.D. // Nature;6/14/2001, Vol. 411 Issue 6839, p770 

    Studies the persistent sourcing of coherent spins for multifunctional semiconductor spintonics. Spectroscopy used to distinguish several parallel channels of interlayer spin-coherent injection; Measurement of spin polarization of semiconductor layers; Analysis of the collected data.

  • Featured issue: Zinc Oxide. Willoughby, Arthur // Journal of Materials Science: Materials in Electronics;Jan2013, Vol. 24 Issue 1, p1 

    An introduction is presented in which the editor discusses various reports within the issue on topics including semiconductors, single crystals and spintronics.

  • Status of the BLAST project. Alarcon, Ricardo // AIP Conference Proceedings;2000, Vol. 549 Issue 1, p893 

    The BLAST detector is presently under construction by an international collaboration and it is scheduled to start commissioning in the summer of 2001. The initial scientific program calls for comprehensive measurements of the spin dependent electromagnetic response of the few body systems. A...

  • Increase in spin injection efficiency of a CoFe/MgO(100) tunnel spin injector with thermal annealing. Wang, R.; Jiang, X.; Shelby, R. M.; Macfarlane, R. M.; Parkin, S. S. P.; Bank, S. R.; Harris, J. S. // Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p052901 

    Postgrowth thermal annealing of a CoFe/MgO(100) tunnel spin injector grown on aGaAs/AlGaAs quantum well structure results in a significantly increased spin injection efficiency as inferred from the polarization of heavy-hole electroluminescence from a quantum well optical detector. The...

  • Semiconductor material has superior magnetic properties.  // Design News;10/15/2001, Vol. 57 Issue 20, p14 

    Presents information on the development of a semiconducting material by Scott Chamber and other scientists at Pacific Northwest National Lab for the improvement of computing speeds and data storage. Definition of spintronics; Method used in the development of the material.

  • Modeling of ferromagnetic semiconductor devices for spintronics. Lebedeva, N.; Kuivalainen, P. // Journal of Applied Physics;6/15/2003, Vol. 93 Issue 12, p9845 

    We develop physical models for magnetic semiconductor devices, where a part of the device structure consists of a ferromagnetic semiconductor layer. First we calculate the effect of the exchange interaction between the charge carrier spins and the spins of the localized magnetic electrons on the...

  • Dilute magnetic semiconductors in spin-polarized electronics (invited). Schmidt, Georg; Molenkamp, Laurens W. // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p7443 

    Dilute magnetic semiconductors have proven to be very useful in building an all-semiconductor platform for spintronics--so far they provide the only viable route to establish spin-polarized current injection into a nonmagnetic semiconductor. The reasons for this become apparent from a simple...

  • An agnostic approach. Keevers, T. L.; Danos, A.; Schmidt, T. W.; McCamey, Dane R. // Nature Nanotechnology;Dec2013, Vol. 8 Issue 12, p886 

    A letter to the editor is presented in response to an article by C. Boehme and J. Lupton related to the research in organic spintronics discussing the spin-based phenomena in organic semiconductors that was published in a previous 2013 issue.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics