Formation and optical properties of InAs/GaAs quantum dots for applications as infrared photodetectors operating at room temperature

Kim, M. D.; Noh, S. K.; Hong, S. C.; Kim, T. W.
January 2003
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p553
Academic Journal
The formation and optical properties of lateral quantum-dot infrared photodetector (QDIP) structures utilizing uniform-sized InAs QDs obtained by controlling the intensity of the reflection high-energy diffraction pattern and the As/In flux ratio were investigated. The thickness of the pseudomorphic, strained InAs wetting layer increased slightly with decreasing As/In flux ratio. The characteristic peaks corresponding to the interband and the intersubband transitions were observed, respectively, in the photoluminescence and Fourier transform infrared spectra. The absorption spectrum showed an absorption peak corresponding to the intersubband transition at around 10 µm. These results indicate that InAs/GaAs QDs obtained by controlling growth conditions hold promise for potential applications in QDIP devices operating at room temperature.


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