TITLE

Formation and optical properties of InAs/GaAs quantum dots for applications as infrared photodetectors operating at room temperature

AUTHOR(S)
Kim, M. D.; Noh, S. K.; Hong, S. C.; Kim, T. W.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p553
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The formation and optical properties of lateral quantum-dot infrared photodetector (QDIP) structures utilizing uniform-sized InAs QDs obtained by controlling the intensity of the reflection high-energy diffraction pattern and the As/In flux ratio were investigated. The thickness of the pseudomorphic, strained InAs wetting layer increased slightly with decreasing As/In flux ratio. The characteristic peaks corresponding to the interband and the intersubband transitions were observed, respectively, in the photoluminescence and Fourier transform infrared spectra. The absorption spectrum showed an absorption peak corresponding to the intersubband transition at around 10 µm. These results indicate that InAs/GaAs QDs obtained by controlling growth conditions hold promise for potential applications in QDIP devices operating at room temperature.
ACCESSION #
8954581

 

Related Articles

  • Quantum dot quantum cascade infrared photodetector. Xue-Jiao Wang; Shen-Qiang Zhai; Ning Zhuo; Jun-Qi Liu; Feng-Qi Liu; Shu-Man Liu; Zhan-Guo Wang // Applied Physics Letters;4/28/2014, Vol. 104 Issue 17, p1 

    We demonstrate an InAs quantum dot quantum cascade infrared photodetector operating at room temperature with a peak detection wavelength of 4.3 μm. The detector shows sensitive photoresponse for normal-incidence light, which is attributed to an intraband transition of the quantum dots and the...

  • Dark current and band profiles in low defect density thick multilayered GaAs/InAs self-assembled quantum dot structures for infrared detectors. Asano, Tetsuya; Madhukar, Anupam; Mahalingam, Krishnamurthy; Brown, Gail J. // Journal of Applied Physics;Dec2008, Vol. 104 Issue 11, p113115 

    We report results of a systematic study of the structural and photoresponse properties of GaAs/{InAs quantum dot (QD)/InGaAs quantum well/GaAs} ×m multiple quantum dot (MQD) structures with m from 1 to 20 placed in n-GaAs/i(MQD)/n-GaAs configuration to act as quantum dot infrared...

  • The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors. Lin, Wei-Hsun; Chao, Kuang-Ping; Tseng, Chi-Che; Mai, Shu-Cheng; Lin, Shih-Yen; Wu, Meng-Chyi // Journal of Applied Physics;Sep2009, Vol. 106 Issue 5, p054512 

    The influence of an additional InGaAs-capped layer on the performance of InAs/GaAs quantum-dot infrared photodetectors (QDIPs) is investigated. For the device with a 15% InGaAs-capped layer, a significant response at 7.9 μm is observed for the QDIP device. The results suggest that with the...

  • Origin of photocurrent in lateral quantum dots-in-a-well infrared photodetectors. Höglund, L.; Asplund, C.; Wang, Q.; Almqvist, S.; Malm, H.; Petrini, E.; Andersson, J. Y.; Holtz, P. O.; Pettersson, H. // Applied Physics Letters;5/22/2006, Vol. 88 Issue 21, p213510 

    Interband and intersubband transitions of lateral InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetectors were studied in order to determine the origin of the photocurrent. The main intersubband transition contributing to the photocurrent (PC) was associated with the quantum dot...

  • Tuning the structural and optical properties of 1.3-μm InAs/GaAs quantum dots by a combined InAlAs and GaAs strained buffer layer. Liu, H. Y.; Hopkinson, M. // Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3644 

    A combined InAlAs and GaAs strained buffer layer was presented to tailor the structural and optical properties of 1.3-µm InAs/GaAs quantum dots. This growth technique exhibits an increment of InAs quantum-dot density from 1.6 × 10[sup 10] to 2.8 × 10[sup 10] cm[sup -2] and an...

  • Temperature Behaviors of In(Ga)As/GaAs Quantum Dots and Patents on the T-Sensitivity of the Lasers. Ju Wu // Recent Patents on Materials Science;Nov2009, Vol. 2 Issue 3, p244 

    In contradiction to the theoretical prediction, the characteristics of the quantum dots are thermally unstable in the relatively high temperature regime. This article briefly summaries the temperature behavior of the self- assembled quantum dots in the In(Ga)As/GaAs system, as experimentally...

  • Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation. Jin-Long Xiao; Yue-De Yang; Yong-Zhen Huang // Optical & Quantum Electronics;Jun2009, Vol. 41 Issue 8, p613 

    The gain recoveries in quantum dot semiconductor optical amplifiers (QD SOAs) are numerically studied by rate equation simulation. Similar to the optical pump-probe experiment, the injection of double 150 fs optical pulses is used to simulate the gain recovery of a weak continuous signal under...

  • Effect of InAs quantum dots on the Fermi level pinning of undoped-n[sup +] type GaAs surface studied by contactless electroreflectance. Jin, Peng; Meng, X. Q.; Zhang, Z. Y.; Li, C. M.; Xu, B.; Liu, F. Q.; Wang, Z. G.; Li, Y. G.; Zhang, C. Z.; Pan, S. H. // Journal of Applied Physics;4/1/2003, Vol. 93 Issue 7, p4169 

    Self-assembled InAs quantum dots (QDs) have been fabricated by depositing 1.6, 1.8, 2.0 and 2.5 monolayer (ML) InAs on surfaces of the undoped-n[sup +] (UN[sup +]) type GaAs structure. Room temperature contactless electroreflectance (CER) was employed to study the built-in electric field and the...

  • Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29μm. Novikov, I.I.; Maksimov, M.V.; Shernyakov, Yu. M.; Gordeev, N. Yu.; Kovsh, A.R.; Zhukov, A.E.; Mikhrin, S.S.; Maleev, N.A.; Vasil'ev, A.P.; Ustinov, V.M.; Alferov, Zh. I.; Ledentsov, N.N.; Bimberg, D. // Semiconductors;Oct2003, Vol. 37 Issue 10, p1239 

    The temperature behavior of the operation characteristics of low-threshold (the threshold current density is below 100A/cm[sup 2]) high-efficiency (differential quantum efficiency is as high as 88%) injection laser heterostructures is studied. The active region of structures emitting in the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics