TITLE

Photoconductivity and spin-dependent photoconductivity of hydrosilylated (111) silicon surfaces

AUTHOR(S)
Lehner, A.; Kohl, F.; Franzke, S. A.; Graf, T.; Brandt, M. S.; Stutzmann, M.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p565
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Organic monolayers were prepared on hydrogen-terminated (111) silicon surfaces by thermally induced hydrosilylation with alkenes. The electronic properties of the modified surfaces were studied by photoconductivity and spin-dependent photoconductivity measurements (electrically detected magnetic resonance) and compared to the oxidized and hydrogen-terminated silicon surfaces. The photoconductivity at low intensity of illumination (monomolecular recombination regime) indicates that the hydrosilylated surface has nearly as few defects as the surfaces treated in HF vapor. The paramagnetic defects detected in the spin-dependent photoconductivity are identified as the silicon dangling bond P[sub b]-center. The density of defects at the hydrosilylated (111) silicon surface is determined by electron spin resonance measurements to be about 10[sup 13] cm[sup -2].
ACCESSION #
8954577

 

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