TITLE

Mechanisms responsible for improvement of 4H–SiC/SiO[sub 2] interface properties by nitridation

AUTHOR(S)
Afanas’ev, V. V.; Stesmans, A.; Ciobanu, F.; Pensl, G.; Cheong, K. Y.; Dimitrijev, S.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p568
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An analysis of fast and slow traps at the interface of 4H-SiC with oxides grown in O[sub 2], N[sub 2]O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation.
ACCESSION #
8954576

 

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