Electrical properties of metal contacts on laser-irradiated n-type GaN

Jang, Ho Won; Kim, Jong Kyu; Lee, Jong-Lam; Schroeder, J.; Sands, T.
January 2003
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p580
Academic Journal
The electrical properties of metal contacts on laser-irradiated n-type GaN were investigated using synchrotron radiation photoemission spectroscopy. A KrF excimer laser pulse of 600 mJ/cm² onto GaN led to a decrease in the Ni Schottky barrier height from 0.91 to 0.47 eV, resulting in the formation of a nonalloyed Ohmic contact with a specific contact resistivity of 1.7 × 10[sup -6] Ω cm². Metallic Ga decomposed from GaN by laser irradiation was transformed into GaO[sub x], playing a role in promoting outdiffusion of N atoms. A large number of N vacancies were produced, forming a degenerated GaN layer near the surface, resulting in the good Ohmic contact.


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