Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

Baik, Jeong Min; Jang, Ho Won; Kim, Jong Kyu; Lee, Jong-Lam
January 2003
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p583
Academic Journal
A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequent annealing. The ferromagnetic property was obtained after annealing at 800 °C. This was attributed to the formation of Ga-Mn magnetic phases. Higher temperature annealing at 900 °C reduced the ferromagnetic signal and produced antiferromagnetic Mn-N compounds such as Mn[sub 6]N[sub 2.58] and Mn[sub 3]N[sub 2], leaving N vacancies. This provides evidence that N vacancies play a critical role in weakening the ferromagnetic property in the Mn-implanted GaN.


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